Inventor
Steven Verhaverbeke
Inventor
San Francisco, CA, US
Overview
Patents· 98 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H01LSemiconductor devices12%
B08BCleaning in general8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C23CCoating metallic material5%
G11BInformation storage based on relative movement between record carrier and transducer5%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
C11DDetergent compositions3%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
11,133,174Reduced volume processing chamber202111,063,169Substrate structuring methods202111,018,032High pressure and high temperature anneal chamber202111,011,392Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures202110,937,726Package structure with embedded core202110,886,232Package structure and fabrication methods202110,879,116Method for copper plating through silicon vias using wet wafer back contact202010,818,490Controlled growth of thin silicon oxide film at low temperature202010,777,405Drying process for high aspect ratio features202010,727,083Method for via formation in flowable epoxy materials by micro-imprint202010,636,677High pressure and high temperature anneal chamber202010,573,510Substrate support and baffle apparatus202010,559,496Techniques for filling a structure using selective surface modification202010,490,411Method for enabling self-aligned lithography on metal contacts and selective deposition using free-standing vertical carbon structures201910,354,892Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures201910,347,511Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device STR201910,304,703Small thermal mass pressurized chamber201910,283,344Supercritical carbon dioxide process for low-k thin films201910,276,411High pressure and high temperature anneal chamber201910,259,007Method and apparatus for aligning nanowires deposited by an electrospinning process201910,234,630Method for creating a high refractive index wave guide201910,229,827Method of redistribution layer formation for advanced packaging applications201910,211,072Method of reconstituted substrate formation for advanced packaging applications201910,096,516Method of forming a barrier layer for through via applications201810,062,561High-pressure annealing and reducing wet etch rates201810,032,624Substrate support and baffle apparatus20189,935,004Process and chemistry of plating of through silicon vias20189,935,005Techniques for filling a structure using selective surface modification20189,739,041'Dual water tank for city water and rain water'20179,685,186'HDD pattern implant system'20179,660,185'Pattern fortification for HDD bit patterned media pattern transfer'20179,646,642'Resist fortification for magnetic media patterning'20179,490,125'Methods for forming a molecular dopant monolayer on a substrate'20169,385,239'Buffer layers for metal oxide semiconductors for TFT'20169,343,664'Pattern fortification for HDD bit patterned media pattern transfer'20169,263,078'Patterning of magnetic thin film using energized ions'20169,105,921'Porous amorphous silicon—carbon nanotube composite based electrodes for battery applications'20158,986,557'HDD patterning using flowable CVD film'20158,911,554'System for batch processing of magnetic media'20148,895,351'Method and apparatus of forming a conductive layer'20148,852,962'Apparatus and methods for silicon oxide CVD resist planarization'20148,778,816'In situ vapor phase surface activation of SiO2 '20148,673,162'Methods for substrate surface planarization during magnetic patterning by plasma immersion ion implantation'20148,658,242'Resist fortification for magnetic media patterning'20148,586,952'Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications'20138,551,578'Patterning of magnetic thin film using energized ions and thermal excitation'20138,535,766'Patterning of magnetic thin film using energized ions'20138,530,356'Method of BARC removal in semiconductor device manufacturing'20138,526,167'Porous amorphous silicon-carbon nanotube composite based electrodes for battery applications'20138,361,835'Method for forming transparent conductive oxide'20138,354,035'Method for removing implanted photo resist from hard disk drive substrates'20138,318,589'Method for forming transparent conductive oxide'20127,914,623'Post-ion implant cleaning for silicon on insulator substrate preparation'20117,836,901'Method and apparatus for wafer cleaning'20107,819,985'Method and apparatus for wafer cleaning'20107,767,586'Methods for forming connective elements on integrated circuits for packaging applications'20107,718,009'Cleaning submicron structures on a semiconductor wafer surface'20107,632,756'Semiconductor processing using energized hydrogen gas and in combination with wet cleaning'20097,586,235'Matching circuit for megasonic transducer device'20097,585,686'Method and apparatus for processing a wafer'20097,521,374'Method and apparatus for cleaning semiconductor substrates'20097,469,883'Cleaning method and solution for cleaning a wafer in a single wafer process'20087,456,113'Cleaning method and solution for cleaning a wafer in a single wafer process'20087,451,774'Method and apparatus for wafer cleaning'20087,449,127'Cleaning method and solution for cleaning a wafer in a single wafer process'20087,435,686'Semiconductor processing using energized hydrogen gas and in combination with wet cleaning'20087,432,177'Post-ion implant cleaning for silicon on insulator substrate preparation'20087,402,213'Stripping and removal of organic-containing materials from electronic device substrate surfaces'20087,358,196'Wet chemical treatment to form a thin oxide for high k gate dielectrics'20087,341,065'Single wafer cleaning method to reduce particle defects on a wafer surface'20087,334,588'Method and apparatus for wafer cleaning'20087,314,854'Ammonium hydroxide treatments for semiconductor substrates'20087,235,479'Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials'20077,232,759'Ammonium hydroxide treatments for semiconductor substrates'20077,205,023'Method and apparatus for chemical mixing in a single wafer process'20077,201,808'Method and apparatus for rotating a semiconductor substrate'20077,190,103'Matching circuit for megasonic transducer device'20077,163,018'Single wafer cleaning method to reduce particle defects on a wafer surface'20077,159,599'Method and apparatus for processing a wafer'20077,037,842'Method and apparatus for dissolving a gas into a liquid for single wet wafer processing'20067,021,319'Assisted rinsing in a single wafer cleaning process'20067,011,715'Rotational thermophoretic drying'20067,000,621'Methods and apparatuses for drying wafer'20066,954,021'Matching circuit for megasonic transducer device'20056,927,176'Cleaning method and solution for cleaning a wafer in a single wafer process'20056,843,855'Methods for drying wafer'20056,807,972'Gutter and splash-guard for protecting a wafer during transfer from a single wafer cleaning chamber'20046,524,940'Methods and devices utilizing the ammonium termination of silicon dioxide films'20036,517,636'Method for reducing particle contamination during the wet processing of semiconductor substrates'20036,495,099'Wet processing methods for the manufacture of electronic components'20026,491,763'Processes for treating electronic components'20026,261,845'Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates'20016,245,158'Wet processing methods for the manufacture of electronic components using liquids of varying temperature'20016,165,912'Electroless metal deposition of electronic components in an enclosable vessel'20006,132,522'Wet processing methods for the manufacture of electronic components using sequential chemical processing'20006,032,682'Method for sulfuric acid resist stripping'20005,972,123'Methods for treating semiconductor wafers'19995,922,624'Method for semiconductor processing using mixtures of HF and carboxylic acid'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2003Patents assigned to CFMT INC (8)· patent assignee history
1999–2003Based in Radnor, PA, US· patent location history
1999Based in West Chester, PA, US· patent location history
2002–2021Based in San Francisco, CA, US· patent location history
2003–2021Patents assigned to APPLIED MATERIALS INC (87)· patent assignee history
2012–2017Patents assigned to VERHAVERBEKE STEVEN (14)· patent assignee history
2012–2014Patents assigned to GOUK ROMAN (8)· patent assignee history
2013–2014Patents assigned to HILKENE MARTIN A (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 87 | 2003–2021 |
| VERHAVERBEKE STEVENself | 14 | 2012–2017 |
| CFMT INC | 8 | 1999–2003 |
| GOUK ROMAN | 8 | 2012–2014 |
| HILKENE MARTIN A | 4 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Francisco, California, US | 89 | 2002–2021 |
| Radnor, Pennsylvania, US | 8 | 1999–2003 |
| West Chester, Pennsylvania, US | 1 | 1999 |