Inventor

MEI-YUN WANG

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 125 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices26%

H01LSemiconductor devices24%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

B82YSpecific uses or applications of nanostructures6%

H10BElectronic memory devices2%

G11CStatic stores1%

A61BDiagnosis0%

G01RMeasuring electric variables0%

H04BTransmission0%

PatentTitleYear

12,593,999Method and apparatus for measuring brain free water content and MRI system2026 12,593,670Contact formation method and related structure2026 12,563,818Methods of forming semiconductor devices2026 12,550,408Connection between gate and source/drain feature2026 12,550,407Semiconductor devices with backside via and methods thereof2026 12,543,553Forming liners to facilitate the formation of copper-containing vias in advanced technology nodes2026 12,527,071Metal gate structure cutting process2026 12,520,566Contact structure and manufacturing method thereof2026 12,506,034—2025 12,507,459—2025 12,501,655Overhanging source/drain contact2025 12,464,774Semiconductor structure and method for manufacturing the same2025 12,464,806Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same2025 12,439,678Isolation structures2025 12,438,049Methods for reducing contact depth variation in semiconductor fabrication2025 12,419,102Semiconductor devices2025 12,414,321Contact profile optimization for IC device performance improvement2025 12,406,907Semiconductor structure with conductive_structure2025 12,389,646Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the same2025 12,376,277Compact electrical connection that can be used to form an SRAM cell and method of making the same2025 12,376,360Silicide backside contact2025 12,363,947Structure and formation method of semiconductor device with contact structures2025 12,342,598Forming metal contacts on metal gates2025 12,334,388Isolation structure and a self-aligned capping layer formed thereon2025 12,324,202Semiconductor device structure and method for forming the same2025 12,317,574Device providing multiple threshold voltages and methods of making the same2025 12,317,538Semiconductor devices2025 12,300,538Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same2025 12,283,630Epitaxial source/drain structures for multigate devices and methods of fabricating thereof2025 12,278,188Different via configurations for different via interface requirements2025 12,266,606Semiconductor device with backside spacer and methods of forming the same2025 12,266,703Dielectric structures for semiconductor device structures2025 12,243,940Methods of forming air spacers in semiconductor devices2025 12,224,324Method of forming backside power rails2025 12,224,330Silicide structures in transistors and methods of forming2025 12,211,787Interconnect structures and methods of fabrication thereof2025 12,199,157Semiconductor device structure and methods of forming the same2025 12,191,151Gate-all-around transistor with reduced source/drain contact resistance2025 12,176,435Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact2024 12,166,088Source/drain contact structure2024 12,165,929Semiconductor device and method2024 12,142,565Different via configurations for different via interface requirements2024 12,125,743Via-first process for connecting a contact and a gate electrode2024 12,125,879Epitaxial source/drain structure and method2024 12,119,378Methods of forming epitaxial source/drain features in semiconductor devices2024 12,107,166Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same2024 12,080,769Contact structure with silicide and method for forming the same2024 12,074,063Contact formation method and related structure2024 12,068,200Backside via with a low-k spacer2024 12,068,201Semiconductor devices2024 12,068,378Semiconductor devices with backside via and methods thereof2024 12,068,396Parasitic capacitance reduction2024 12,062,578Prevention of contact bottom void in semiconductor fabrication2024 12,057,392Conductive features having varying resistance2024 12,057,488Methods of reducing capacitance in field-effect transistors2024 12,009,400Device providing multiple threshold voltages and methods of making the same2024 12,009,363Method for forming source/drain contacts2024 12,002,863Semiconductor device with air-gap spacers2024 11,990,378Semiconductor device and method2024 11,978,664Polishing interconnect structures in semiconductor devices2024 11,961,886Semiconductor structure with conductive structure2024 11,935,932Semiconductor device and method2024 11,915,971Contact formation method and related structure2024 11,901,426Forming metal contacts on metal gates2024 11,876,135Epitaxial source/drain structures for multigate devices and methods of fabricating thereof2024 11,855,169Silicide structures in transistors and methods of forming2023 11,855,154Vertical interconnect features and methods of forming2023 11,856,745Compact electrical connection that can be used to form an SRAM cell and method of making the same2023 11,855,161Semiconductor device contact structures and methods of fabricating thereof2023 11,843,028Isolation features and methods of fabricating the same2023 11,791,387Semiconductor devices with backside via and methods thereof2023 11,784,222Epitaxial source/drain structure and method2023 11,777,004Fin field effect transistor (FinFET) device structure and method for forming the same2023 11,757,022Parasitic capacitance reduction2023 11,742,400Fin field effect transistor (FinFET) device structure with deep contact structure2023 11,735,474Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same2023 11,728,397Integrated circuits having protruding interconnect conductors2023 11,728,394Method of forming backside power rails2023 11,721,626Semiconductor device with backside spacer and methods of forming the same2023 11,721,590Semiconductor device and method2023 11,694,931Metal gate structure cutting process2023 11,682,579Method of forming trenches with different depths2023 11,682,729Methods of forming air spacers in semiconductor devices2023 11,670,544Via-first process for connecting a contact and a gate electrode2023 11,646,346Contact structure with air spacer for semiconductor device and method for forming the same2023 11,640,936Interconnect structures and methods of fabrication thereof2023 11,621,267Compact electrical connection that can be used to form an SRAM cell and method of making the same2023 11,615,991Semiconductor device and method2023 11,615,987Backside via with a low-k spacer2023 11,581,193Semiconductor device and a method for fabricating the same2023 11,569,364Silicide backside contact2023 11,532,717Forming metal contacts on metal gates2022 11,532,561Different via configurations for different via interface requirements2022 11,532,507Semiconductor device and method2022 11,532,480Methods of forming contact features in semiconductor devices2022 11,527,614Semiconductor structure with conductive structure and method for manufacturing the same2022 11,508,822Source/drain via having reduced resistance2022 11,495,494Methods for reducing contact depth variation in semiconductor fabrication2022 11,495,606FinFET having non-merging epitaxially grown source/drains2022 11,489,053Semiconductor device and method2022 11,450,572Semiconductor device and method2022 11,430,691Polishing interconnect structures in semiconductor devices2022 11,393,724Semiconductor device and method2022 11,387,240Compact electrical connection that can be used to form an SRAM cell and method of making the same2022 11,387,331Source/drain contact structure2022 11,374,104Methods of reducing capacitance in field-effect transistors2022 11,362,003Prevention of contact bottom void in semiconductor fabrication2022 11,348,830Method of forming trenches with different depths2022 11,349,005Silicide structures in transistors and methods of forming2022 11,322,394Contact formation method and related structure2022 11,302,802Parasitic capacitance reduction2022 11,288,804Brain tumor image segmentation method, device and storage medium2022 11,289,383Semiconductor device and method2022 11,276,643Semiconductor device with backside spacer and methods of forming the same2022 11,271,112Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact2022 11,264,383Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same2022 11,244,832Semiconductor structure with mask structure2022 11,239,309Isolation features and methods of fabricating the same2022 11,227,950Methods of forming air spacers in semiconductor devices2022 11,227,830Conductive features having varying resistance2022 11,222,951Epitaxial source/drain structure and method2022 11,217,492Method for source/drain contact formation in semiconductor devices using common doping and common etching to n-type and p-type source/drains2022 11,189,525Via-first process for connecting a contact and a gate electrode2021 11,177,212Contact formation method and related structure2021 11,145,554Method for source/drain contact formation in semiconductor devices2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (123)· patent assignee history

2021–2026Based in TW· patent location history

2022–2026Patents assigned to HENAN PROVINCIAL PEOPLES HOSPITAL (2)· patent assignee history

2022Patents assigned to SIEMENS HEALTHCARE GMBH (1)· patent assignee history

2022–2026Based in CN· patent location history

2026Patents assigned to SIEMENS HEALTHINEERS LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	123	2021–2026
HENAN PROVINCIAL PEOPLES HOSPITAL	2	2022–2026
SIEMENS HEALTHCARE GMBH	1	2022
SIEMENS HEALTHINEERS LTD	1	2026

Locations

Location	Patents	Span
TW	123	2021–2026
CN	2	2022–2026