Inventor

KUAN-CHIEH HUANG

Inventor
TW

Overview

24→
Patents
2022–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G01SRadio direction-finding4%
G06TImage data processing or generation, in general4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y02PClimate change mitigation technologies in the production or processing of goods4%
G06FElectric digital data processing3%
G06NComputing arrangements based on specific computational models3%
PatentTitleYear
12,581,764Bond structure having shielding structures for stacked IC chips202612,507,490Semiconductor device including germanium region disposed in semiconductor substrate202512,495,632Semiconductor image sensor and method for forming the same202512,396,289Germanium-containing photodetector and methods of forming the same202512,363,969Passivation layer for epitaxial semiconductor process202512,166,054Image sensor with passivation layer for dark current reduction202412,148,853Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof202412,125,934Method of manufacturing an optical sensor202412,051,763Germanium-containing photodetector and methods of forming the same202412,015,099Semiconductor sensor and methods thereof202412,014,813Contouring system202411,908,900Passivation layer for epitaxial semiconductor process202411,901,393Image sensor and manufacturing method thereof202411,855,237Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof202311,848,345Image sensor with passivation layer for dark current reduction202311,837,613Germanium-containing photodetector and methods of forming the same202311,779,295Method and system of vertebral compression fracture detection202311,749,398Medical image recognition system and medical image recognition method202311,600,737Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof202311,568,232Deep learning FPGA converter202311,508,817Passivation layer for epitaxial semiconductor process202211,387,167Semiconductor structure and manufacturing method for the same202211,222,814Integrated circuit (IC) structure for high performance and functional density202211,217,478Integrated circuit (IC) structure for high performance and functional density2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (20)· patent assignee history
2022–2026Based in TW· patent location history
2023–2024Patents assigned to QUANTA COMP INC (4)· patent assignee history
2023Patents assigned to UNIV TAIPEI MEDICAL (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD202022–2026
QUANTA COMP INC42023–2024
UNIV TAIPEI MEDICAL12023
Locations
LocationPatentsSpan
TW242022–2026