Inventor

Jung-Dal Choi

Inventor

Suwon-si, KR

Overview

1991–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 180 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices33%

H10DInorganic electric semiconductor devices22%

G11CStatic stores19%

H01LSemiconductor devices6%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

B82YSpecific uses or applications of nanostructures2%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

G06FElectric digital data processing1%

H10NElectric solid-state devices not otherwise provided for1%

PatentTitleYear

11,049,445Electronic devices with narrow display borders2021 11,021,829Washing machine2021 11,015,925Flexible display and method for measuring angle of the same2021 10,644,026Semiconductor device and manufacturing method thereof2020 10,355,013Semiconductor device and method of manufacturing the same2019 9,761,314'Non-volatile memory devices and methods of operating the same'2017 9,564,435'Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device'2017 9,450,049'Semiconductor device and method for fabricating the same'2016 9,450,025'Resistive memory device and method of operating resistive memory device'2016 9,425,198'Semiconductor device having strain-relaxed buffer layer and method of manufacturing the same'2016 9,391,269'Variable resistance memory devices'2016 9,391,134'Fin field effect transistor, semiconductor device including the same and method of forming the semiconductor device'2016 9,385,138'Memory devices including vertical pillars and methods of manufacturing and operating the same'2016 9,373,664'Variable resistance memory devices and methods of manufacturing the same'2016 9,349,879'Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps'2016 9,318,419'Conductive line structures and methods of forming the same'2016 9,202,932'Semiconductor devices and methods of manufacturing the same'2015 9,184,164'Nonvolatile memory devices'2015 9,159,432'Method of programming a nonvolatile memory device'2015 9,111,619'Semiconductor memory devices and methods of manufacturing the same'2015 8,969,947'Vertical memory devices with quantum-dot charge storage cells'2015 8,907,398'Gate structure in non-volatile memory device'2014 8,895,393'Memory devices including vertical pillars and methods of manufacturing and operating the same'2014 8,884,377'Conductive line structures and methods of forming the same'2014 8,836,074'Semiconductor memory device'2014 8,765,572'Method of fabricating semiconductor device'2014 8,699,274'Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure'2014 8,674,429'Gate structure in non-volatile memory device'2014 8,675,409'Non-volatile memory devices'2014 8,643,077'Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps'2014 8,629,489'Nonvolatile memory devices'2014 8,588,001'Integrated circuit memory devices having vertically arranged strings of memory cells therein and methods of operating same'2013 8,546,870'Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices'2013 8,522,115'Flash memory device and memory system comprising same'2013 8,487,383'Flash memory device having triple well structure'2013 8,441,062'Nonvolatile memory devices having memory cell transistors therein with lower bandgap source/drain regions'2013 8,441,059'Memory devices including vertical pillars and methods of manufacturing and operating the same'2013 8,427,881'Semiconductor memory device and programming method thereof'2013 8,372,711'Methods of fabricating semiconductor devices with sidewall conductive patterns'2013 8,334,562'Memory device and method of fabricating the same'2012 8,329,574'Methods of fabricating flash memory devices having shared sub active regions'2012 8,319,268'Semiconductor device capable of suppressing short channel effect'2012 8,315,102'Multi-bit flash memory devices and methods of programming and erasing the same'2012 8,315,103'Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure'2012 8,314,457'Non-volatile memory devices'2012 8,259,503'Semiconductor device having a field effect source/drain region'2012 8,248,853'Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line'2012 8,237,199'Cell array of semiconductor memory device and a method of forming the same'2012 8,232,170'Methods for fabricating semiconductor devices with charge storage patterns'2012 8,228,738'NAND flash memory device having dummy memory cells and methods of operating same'2012 8,217,467'Semiconductor memory devices'2012 8,198,157'Methods of forming non-volatile memory devices including dummy word lines'2012 8,188,532'Semiconductor device having a gate contact structure capable of reducing interfacial resistance'2012 8,169,018'Non-volatile memory device'2012 8,134,873'Flash memory device and programming/erasing method of the same'2012 8,125,015'Nonvolatile memory devices'2012 8,089,114'Non-volatile memory devices including blocking and interface patterns between charge storage patterns and control electrodes and related methods'2012 8,085,607'3-level non-volatile semiconductor memory device and method of driving the same'2011 8,072,804'Multi-bit flash memory devices and methods of programming and erasing the same'2011 8,048,746'Method of making flash memory cells and peripheral circuits having STI, and flash memory devices and computer systems having the same'2011 8,045,385'Methods of operating nonvolatile memory devices to inhibit parasitic charge accumulation therein'2011 8,045,383'Non-volatile memory devices including dummy word lines and related structures and methods'2011 8,036,031'Semiconductor device having a field effect source/drain region'2011 8,035,151'Semiconductor device capable of suppressing short channel effect and method of fabricating the same'2011 8,021,978'Methods of fabricating flash memory devices having shared sub active regions'2011 8,018,781'Method of operating nonvolatile memory device'2011 8,004,893'Integrated circuit memory devices having vertically arranged strings of memory cells therein and methods of operating same'2011 7,999,307'Nonvolatile memory device having cell and peripheral regions and method of making the same'2011 7,973,357'Non-volatile memory devices'2011 7,973,354'Semiconductor devices with sidewall conductive patterns and methods of fabricating the same'2011 7,968,931'Non-volatile semiconductor memory devices'2011 7,924,622'Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure'2011 7,893,484'Semiconductor device with charge storage pattern and method for fabricating the same'2011 7,888,219'Methods of forming charge-trap type non-volatile memory devices'2011 7,888,203'Methods of making nonvolatile memory devices'2011 7,884,425'Non-volatile memory devices'2011 7,881,114'NAND flash memory device having dummy memory cells and methods of operating same'2011 7,872,295'Method of making flash memory cells and peripheral circuits having STI, and flash memory devices and computer systems having the same'2011 7,867,883'Methods of fabricating non-volatile memory devices'2011 7,863,686'Nonvolatile memory devices having a fin shaped active region'2011 7,863,676'Semiconductor devices and methods of fabricating the same'2011 7,864,582'Nonvolatile memory devices and methods of operating same to inhibit parasitic charge accumulation therein'2011 7,842,997'Nonvolatile memory device having cell and peripheral regions and method of making the same'2010 7,843,731'Memory array architecture for a memory device and method of operating the memory array architecture'2010 7,830,724'Nonvolatile memory device with NAND cell strings'2010 7,821,825'NAND flash memory devices having shielding lines between wordlines and selection lines'2010 7,816,245'Method of forming semiconductor devices in which a cell gate pattern and a resistor pattern are formed of a same material'2010 7,812,390'Semiconductor memory device with memory cells on multiple layers'2010 7,808,036'Memory device and method of fabricating the same'2010 7,804,120'Non-volatile semiconductor memory devices'2010 7,799,645'Semiconductor device and method of manufacturing the same'2010 7,795,643'Cell array of semiconductor memory device and a method of forming the same'2010 7,776,687'Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same'2010 7,778,082'Non-volatile memory device and programming method'2010 7,772,639'Charge-trap nonvolatile memory devices'2010 7,773,422'3-level non-volatile semiconductor memory device and method of driving the same'2010 7,772,654'Methods of fabricating nonvolatile memory devices'2010 7,759,723'Non-volatile semiconductor memory devices'2010 7,732,856'Charge-trap type non-volatile memory devices and related methods'2010 7,723,776'Flash memory devices having shared sub active regions'2010 7,652,931'Nonvolatile memory device with NAND cell strings'2010 7,645,644'Data line layout in semiconductor memory device and method of forming the same'2010 7,639,529'Non-volatile memory devices that utilize mirror-image programming techniques to inhibit program coupling noise and methods of programming same'2009 7,623,366'Semiconductor device having a field effect source/drain region'2009 7,605,430'Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same'2009 7,605,473'Nonvolatile memory devices'2009 7,583,540'Flash memory device and method of programming the same'2009 7,547,942'Nonvolatile memory devices and methods of fabricating the same'2009 7,529,138'Flash memory devices, methods of erasing flash memory devices and memory systems including the same'2009 7,508,048'Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby'2009 7,501,322'Methods of forming non-volatile memory devices having trenches'2009 7,492,206'Level shifter with reduced leakage current and block driver for nonvolatile semiconductor memory device'2009 7,486,554'NAND flash memory devices having shielding lines between wordlines and selection lines'2009 7,480,178'NAND flash memory device having dummy memory cells and methods of operating same'2009 7,470,948'Memory cell array structures in NAND flash memory devices'2008 7,408,806'Memory array architecture for a memory device and method of operating the memory array architecture'2008 7,399,672'Methods of forming nonvolatile memory devices'2008 7,400,009'Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers'2008 7,397,093'Semiconductor devices with sidewall conductive patterns methods of fabricating the same'2008 7,391,071'Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same'2008 7,385,834'Data line layout in semiconductor memory device and method of forming the same'2008 7,366,033'3-level non-volatile semiconductor memory device and method of driving the same'2008 7,342,827'Charge trap-type 3-level non-volatile semiconductor memory device and method of driving the same'2008 7,273,783'Methods for reducing void formation in semiconductor devices'2007 7,259,421'Non-volatile memory devices having trenches'2007 7,253,467'Non-volatile semiconductor memory devices'2007 7,247,538'Methods of fabricating floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers'2007 7,195,966'Methods of fabricating semiconductor devices including polysilicon resistors and related devices'2007 7,084,030'Method of forming a non-volatile memory device having floating trap type memory cell'2006 7,084,440'Integrated circuit layout and a semiconductor device manufactured using the same'2006 7,081,651'Non-volatile memory device with protruding charge storage layer and method of fabricating the same'2006 6,979,628'Methods of forming semiconductor devices having field oxides in trenches and devices formed thereby'2005 6,960,500'Semiconductor device and method of manufacturing the same including forming metal silicide gate lines and source lines'2005 6,936,885'NAND-type flash memory devices and methods of fabricating the same'2005 6,894,924'Operating a non-volatile memory device'2005 6,881,626'Method of fabricating a non-volatile memory device with a string select gate'2005 6,858,906'Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers'2005 6,828,637'Semiconductor memory devices having dummy active regions'2004 6,818,510'Non-volatile memory device and method for fabricating the same'2004 6,806,518'Semiconductor memory devices having dummy active regions'2004 6,784,055'Flash memory device and a method for fabricating the same'2004 6,784,481'Flash memory device with isolation regions and a charge storage dielectric layer formed only on an active region'2004 6,781,193'Non-volatile memory device having floating trap type memory cell and method of forming the same'2004 6,774,433'Non-volatile memory device with diffusion layer'2004 6,753,572'Floating trap-type non-volatile memory device'2004 6,750,525'Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure'2004 6,740,940'Semiconductor memory devices having dummy active regions'2004 6,737,335'Shallow trench isolation type semiconductor device and method of manufacturing the same'2004 6,734,065'Method of forming a non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure'2004 6,720,579'Semiconductor device and method of manufacturing the same'2004 6,677,639'Non-volatile memory device and method for fabricating the same'2004 6,677,200'Method of forming non-volatile memory having floating trap type device'2004 6,624,464'Highly integrated non-volatile memory cell array having a high program speed'2003 6,586,804'Shallow trench isolation type semiconductor device and method of manufacturing the same'2003 6,576,513'Nand-type flash memory device and method of forming the same'2003 6,567,308'NAND-type flash memory device and method of forming the same'2003 6,528,841'NAND type flash memory device having dummy region'2003 6,521,941'Non-volatile memory device and fabrication method thereof'2003 6,370,062'NAND-type flash memory device and method of operating the same'2002 6,246,607'Methods of programming nonvolatile memory cells by floating drain or source regions associated therewith'2001 6,228,714'Method for manufacturing nonvolatile memory device'2001 6,118,696'Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same'2000 6,093,605'Method of manufacturing a nonvolatile memory device having a program-assist plate'2000 6,061,270'Method for programming a non-volatile memory device with program disturb control'2000 5,990,514'Nonvolatile semiconductor memory having boosting lines self-aligned with word lines'1999 5,936,887'Non-volatile memory device with NAND type cell structure'1999 5,923,587'Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same'1999 5,886,924'Nonvolatile semiconductor memory having sub-arrays formed within pocket wells'1999 5,877,980'Nonvolatile memory device having a program-assist plate'1999 5,812,454'Nand-type flash memory device and driving method thereof'1998 5,751,045'Nand type non-volatile memory device'1998 5,736,447'Method for manufacturing a bipolar junction transistor having a polysilicon emitter'1998 5,734,609'Integrated circuit memory devices having reduced susceptibility to inadvertent programming and erasure and methods of operating same'1998 5,716,885'Method for manufacturing NAND type mask-ROM having improved cell current'1998 5,671,176'Semiconductor memory device including program inhibition capacitors and method for controlling program-disturb of non-selected memory cells'1997 5,650,956'Current amplification type mask-ROM'1997 5,483,483'Read-only memory device'1996 5,332,917'Semiconductor memory NAND with wide space between selection lines'1994 5,015,886'Programmable sequential-code recognition circuit'1991 4,983,860'Data output buffer for use in semiconductor device'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (176)· patent assignee history

1991–2021Based in Seoul, KR· patent location history

1994–2017Based in Suwon-si, KR· patent location history

1997–2014Based in Kyungki-do, KR· patent location history

2007–2020Based in Gyeonggi-do, KR· patent location history

2011–2017Patents assigned to CHOI JUNG-DAL (36)· patent assignee history

2012–2014Patents assigned to SEL JONG-SUN (8)· patent assignee history

2012–2014Patents assigned to KANG CHANG-SEOK (6)· patent assignee history

2012–2014Patents assigned to LEE CHANG-HYUN (6)· patent assignee history

2013–2017Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	176	1991–2021
CHOI JUNG-DALself	36	2011–2017
SEL JONG-SUN	8	2012–2014
KANG CHANG-SEOK	6	2012–2014
LEE CHANG-HYUN	6	2012–2014

Locations

Location	Patents	Span
Suwon-si, KR	48	1994–2017
Kyungki-do, KR	45	1997–2014
Gyeonggi-do, KR	40	2007–2020
Hwaseong-si, KR	20	2013–2017
Seoul, KR	19	1991–2021