Inventor
Tetsuya Osaka
Inventor
Tokyo, JP
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G01Rprimary
G01RMeasuring electric variables10%
Y10TTechnical subjects covered by former us classification10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
G11BInformation storage based on relative movement between record carrier and transducer6%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C23CCoating metallic material5%
C25DProcesses for the electrolytic or electrophoretic production of coatings4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
PatentTitleYear
11,121,386Temperature estimating apparatus202110,976,372Battery state estimation device and battery state estimation method202110,718,817Battery state estimating apparatus202010,656,216Battery state estimating apparatus202010,649,036Battery state estimating apparatus202010,507,734Battery state estimating apparatus201910,429,444State of charge detection device201910,281,530Battery capacity measuring device and battery capacity measuring method20199,977,059Electrochemical analysis apparatus and electrochemical system20189,531,040'Battery system and method for evaluating battery system'20169,354,278'Device for detecting normal, abnormal or deteriorated battery state'20169,064,520'Magnetic recording medium and method of manufacturing the same, and magnetic record/reproduction apparatus'20158,900,524'Optical sensor'20148,784,931'ULSI wiring and method of manufacturing the same'20148,148,160'Electrode for molecular sensing and method for molecular sensing'20127,838,912'Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device'20107,836,567'Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor'20107,816,041'Fuel cell'20107,591,911'Plated film of gold-cobalt amorphous alloy, electroplating bath, and method for electroplating'20097,547,972'Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof'20097,498,520'Semiconductor multilayer wiring board and method of forming the same'20097,242,553'Substrate for magnetic recording medium'20077,196,898'Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor'20077,135,103'Preparation of soft magnetic thin film'20067,029,772'Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus'20066,972,157'Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus'20056,337,007'Method of making a Co-Fe-Ni soft magnetic thin film'20026,303,231'Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric memories formed with said coating solutions, as well as processes for production thereof'20016,274,233'Magnetic recording medium'20016,120,912'Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof'20006,120,918'Co-Fe-Ni thin magnetic film, process for producing the same, composite thin film magnetic head, and magnetic recording device'20006,063,512'Soft magnetic thin film having Co, Ni and Fe as main ingredients, method of manufacturing the same and magnetic head and magnetic storage unit using the soft magnetic thin film'20005,972,096'Coating solutions for use in forming bismuth-based ferroelectric thin films'19995,811,153'Coating solutions for use in forming bismuth-based dielectric thin films, and dielectric thin films and memories formed with said coating solutions, as well as processes for production thereof'19985,294,560'Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof'19945,175,114'Method for production of a bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2021Based in Tokyo, JP· patent location history
1994Based in Tanashi, JP· patent location history
1998–2010Patents assigned to TOKYO OHKA KOGYO CO LTD (7)· patent assignee history
2000–2020Patents assigned to UNIV WASEDA (19)· patent assignee history
2012–2020Patents assigned to OSAKA TETSUYA (5)· patent assignee history
2016–2021Patents assigned to PRIMEARTH EV ENERGY CO LTD (4)· patent assignee history
2016–2019Based in Nishitokyo, JP· patent location history
2019–2021Patents assigned to TOYOTA MOTOR CO LTD (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV WASEDA | 19 | 2000–2020 |
| TOKYO OHKA KOGYO CO LTD | 7 | 1998–2010 |
| OSAKA TETSUYAself | 5 | 2012–2020 |
| TOYOTA MOTOR CO LTD | 5 | 2019–2021 |
| PRIMEARTH EV ENERGY CO LTD | 4 | 2016–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 33 | 1992–2021 |
| Nishitokyo, JP | 2 | 2016–2019 |
| Tanashi, JP | 1 | 1994 |