Inventor

Jin Yeong Kang

Inventor
Daejeon, KR

Overview

25→
Patents
1995–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices28%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation15%
B82YSpecific uses or applications of nanostructures7%
H01FMagnets7%
G11CStatic stores4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%
G05FSystems for regulating electric or magnetic variables2%
PatentTitleYear
9,058,891'EEPROM cell and EEPROM device'20158,927,433'Conductive via hole and method for forming conductive via hole'20158,730,728'EEPROM cell with transfer gate'20148,513,655'Organic light emitting diode and manufacturing method thereof'20138,421,144'Electrically erasable programmable read-only memory and manufacturing method thereof'20138,247,854'CMOS image sensor'20127,994,553'CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the same'20117,943,995'NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same'20117,902,577'Image sensor having heterojunction bipolar transistor and method of fabricating the same'20117,855,366'Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof'20107,741,665'High-quality CMOS image sensor and photo diode'20107,534,680'Bipolar transistor, BiCMOS device, and method for fabricating thereof'20097,375,504'Reference current generator'20087,348,632'NMOS device formed on SOI substrate and method of fabricating the same'20087,170,355'Voltage-controlled oscillator using current feedback network'20077,157,977'Automatic gain control feedback amplifier'20077,115,459'Method of fabricating SiGe Bi-CMOS device'20067,094,617'Optoelectronic device having dual-structural nano dot and method for manufacturing the same'20066,980,075'Inductor having high quality factor and unit inductor arranging method thereof'20056,791,105'Optoelectronic device having dual-structural nano dot and method for manufacturing the same'20046,686,640'Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor'20046,661,325'Spiral inductor having parallel-branch structure'20036,469,609'Method of fabricating silver inductor'20026,346,861'Phase locked loop with high-speed locking characteristic'20025,389,796'Vacuum transistor having an optical gate'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2015Patents assigned to KOREA ELECTRONICS TELECOMM (25)· patent assignee history
1995–2015Based in Daejeon, KR· patent location history
2002Based in Taejon, KR· patent location history
2003–2005Based in Daejon, KR· patent location history
2004–2006Based in Kumi-shi, KR· patent location history
2012Patents assigned to KANG JIN YEONG (1)· patent assignee history
2013–2015Patents assigned to KANG JIN-YEONG (4)· patent assignee history
2013Patents assigned to BAEK KYU HA (1)· patent assignee history
2013Patents assigned to DO LEE MI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
KOREA ELECTRONICS TELECOMM251995–2015
KANG JIN-YEONGself42013–2015
BAEK KYU HA12013
DO LEE MI12013
KANG JIN YEONGself12012
Locations
LocationPatentsSpan
Daejeon, KR181995–2015
Daejon, KR32003–2005
Kumi-shi, KR22004–2006
Taejon, KR22002