Inventor
Satoshi Oida
Inventor
Yorktown Heights, NY, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10DInorganic electric semiconductor devices9%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution9%
G06NComputing arrangements based on specific computational models5%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form4%
B82YSpecific uses or applications of nanostructures4%
H10BElectronic memory devices4%
PatentTitleYear
11,024,803Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements202110,748,059Architecture for an electrochemical artificial neural network202010,749,050Thin film CZTSSe photovoltaic device202010,361,331Photovoltaic structures having multiple absorber layers separated by a diffusion barrier201910,269,994Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation201910,256,405Methods for fabricating artificial neural networks (ANN) based on doped semiconductor elements201910,008,618Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation20189,935,214Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation20189,711,613'Stacked graphene field-effect transistor'20179,508,801'Stacked graphene field-effect transistor'20169,472,450'Graphene cap for copper interconnect structures'20168,969,115'Transparent conductive electrode stack containing carbon-containing material'20158,895,433'Method of forming a graphene cap for copper interconnect structures'20148,741,678'Transparent conductive electrode stack containing carbon-containing material'20148,623,761'Method of forming a graphene cap for copper interconnect structures'20148,242,030'Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2021Patents assigned to IBM (14)· patent assignee history
2012–2016Patents assigned to HANNON JAMES B (3)· patent assignee history
2012–2016Patents assigned to OIDA SATOSHI (3)· patent assignee history
2012–2021Based in Yorktown Heights, NY, US· patent location history
2014–2016Patents assigned to BONILLA GRISELDA (2)· patent assignee history
2014–2016Patents assigned to DIMITRAKOPOULOS CHRISTOS D (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 14 | 2012–2021 |
| HANNON JAMES B | 3 | 2012–2016 |
| OIDA SATOSHIself | 3 | 2012–2016 |
| BONILLA GRISELDA | 2 | 2014–2016 |
| DIMITRAKOPOULOS CHRISTOS D | 2 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yorktown Heights, New York, US | 16 | 2012–2021 |