Inventor
Shigeru Niki
Inventor
Tsukuba, JP
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation20%
H10HInorganic light-emitting semiconductor devices having potential barriers20%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution13%
Y02PClimate change mitigation technologies in the production or processing of goods11%
C30BSingle-crystal growth9%
H01LSemiconductor devices9%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
C03CChemical composition of glasses, glazes or vitreous enamels2%
C23CCoating metallic material2%
PatentTitleYear
9,496,433'Photoelectric conversion device and method for manufacturing photoelectric conversion device'20169,202,962'Solid state imaging device and fabrication method for the same'20158,921,691'Solar cell and manufacturing method thereof'20148,895,463'Glass substrate for Cu-In-Ga-Se solar cell and solar cell using same'20148,592,933'Photoelectric conversion device, fabrication method for the same, and solid state imaging device'20138,304,804'Semiconductor device'20128,299,510'Solid state imaging device and fabrication method for the same'20128,012,546'Method and apparatus for producing semiconductor films and related devices'20117,605,012'ZnO based compound semiconductor light emitting device and method for manufacturing the same'20096,987,029'ZnO based compound semiconductor light emitting device and method for manufacturing the same'20066,770,913'ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit'20046,674,098'ZnO compound semiconductor light emitting element'20046,649,434'Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer'20036,638,846'Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device'20036,566,162'Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film'20036,531,408'Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same'20036,472,241'Radical cell device and method for manufacturing groups II-VI compound semiconductor device'20026,281,036'Method of fabricating film for solar cells'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2015Based in Ibaraki, JP· patent location history
2002–2015Patents assigned to NAT INST OF ADVANCED IND SCIEN (14)· patent assignee history
2002–2016Patents assigned to ROHM CO LTD (11)· patent assignee history
2002–2016Based in Tsukuba, JP· patent location history
2012–2014Patents assigned to ISHIZUKA SHOGO (4)· patent assignee history
2012–2014Patents assigned to NIKI SHIGERU (4)· patent assignee history
2012–2013Patents assigned to SAKURAI KEIICHIRO (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NAT INST OF ADVANCED IND SCIEN | 14 | 2002–2015 |
| ROHM CO LTD | 11 | 2002–2016 |
| ISHIZUKA SHOGO | 4 | 2012–2014 |
| NIKI SHIGERUself | 4 | 2012–2014 |
| SAKURAI KEIICHIRO | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tsukuba, JP | 13 | 2002–2016 |
| Ibaraki, JP | 5 | 2001–2015 |