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Inventor

Shigeto Maegawa

Inventor
Tokyo, JP

Overview

71→
Patents
1992–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10BElectronic memory devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
G11CStatic stores2%
PatentTitleYear
8,350,331'Semiconductor device and manufacturing method for the same'20138,067,804'Semiconductor device having an SOI structure, manufacturing method thereof, and memory circuit'20117,741,679'Semiconductor device, method of manufacturing same and method of designing same'20107,723,790'Semiconductor device and method of manufacturing the same'20107,675,122'Semiconductor memory device'20107,541,644'Semiconductor device with effective heat-radiation'20097,531,878'Semiconductor MIS transistor formed on SOI semiconductor substrate'20097,511,342'Semiconductor device having SOI structure and method for manufacturing the same'20097,482,658'Semiconductor device and method of manufacturing the same'20097,439,587'Semiconductor device and method of manufacturing the same'20087,402,865'Semiconductor device including a contact connected to the body and method of manufacturing the same'20087,382,026'Semiconductor memory device and method of manufacturing the same'20087,358,555'Semiconductor device'20087,321,152'Thin-film transistor and method of fabricating the same'20087,303,950'Semiconductor device, method of manufacturing same and method of designing same'20077,271,454'Semiconductor memory device and method of manufacturing the same'20077,193,272'Semiconductor device and method of manufacturing the same'20077,187,040'Thin-film transistor and method of fabricating the same'20077,164,172'Semiconductor device and method of manufacturing same'20077,144,764'Method of manufacturing semiconductor device having trench isolation'20067,112,854'Thin-film transistor and method of fabricating the same'20066,958,266'Semiconductor device, method of manufacturing same and method of designing same'20056,953,979'Semiconductor device, method of manufacturing same and method of designing same'20056,914,307'Semiconductor device and method of manufacturing the same'20056,882,006'Semiconductor device and method of manufacturing the same'20056,870,226'Semiconductor device and method of manufacturing same'20056,869,865'Method of manufacturing semiconductor device'20056,841,400'Method of manufacturing semiconductor device having trench isolation'20056,815,295'Method of manufacturing field effect transistors'20046,787,855'Semiconductor device and method of manufacturing same'20046,727,572'Semiconductor device including high frequency circuit with inductor'20046,727,551'MOS semiconductor device and method of manufacturing the same'20046,699,758'Semiconductor device and method for manufacturing the same'20046,693,324'Semiconductor device having a thin film transistor and manufacturing method thereof'20046,646,306'Semiconductor device'20036,548,859'MOS semiconductor device and method of manufacturing the same'20036,541,841'Semiconductor device including high frequency circuit with inductor'20036,492,690'Semiconductor device having control electrodes with different impurity concentrations'20026,459,125'SOI based transistor inside an insulation layer with conductive bump on the insulation layer'20026,426,543'Semiconductor device including high-frequency circuit with inductor'20026,420,751'Semiconductor device and method of manufacturing the same'20026,414,353'TFT with partially depleted body'20026,383,860'Semiconductor device and method of manufacturing the same'20026,340,829'Semiconductor device and method for manufacturing the same'20026,310,377'Semiconductor device having an SOI structure'20016,303,425'Semiconductor device and method of manufacturing the same'20016,218,724'Thin film transistor used in semiconductor memory for achieving reduction in power consumption'20016,191,450'Semiconductor device with field shield electrode'20016,190,967'Semiconductor device and manufacturing method thereof'20016,150,688'Semiconductor device and method of manufacturing the same'20006,127,209'Semiconductor device and method of manufacturing the same'20006,124,619'Semiconductor device including upper, lower and side oxidation-resistant films'20006,103,556'Thin-film transistor and method of manufacturing the same'20006,020,610'Semiconductor device and method of manufacturing the same'20005,998,828'Semiconductor device having nitrogen introduced in its polysilicon gate'19995,994,735'Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof'19995,981,990'Semiconductor memory device, method of manufacturing the same and method of using the same'19995,885,858'Method of manufacturing thin-film transistor'19995,861,650'Semiconductor device comprising an FPGA'19995,821,585'Thin film transistor and manufacturing method thereof'19985,808,341'Semiconductor device having an SOI structure'19985,780,888'Semiconductor device with storage node'19985,726,945'Semiconductor device with reduced power consumption and thin film transistor used in semiconductor memory device for achieving reduction in power consumption'19985,627,390'Semiconductor device with columns'19975,583,362'Gate all around thin film transistor'19965,578,513'Method of making a semiconductor device having a gate all around type of thin film transistor'19965,440,168'Thin-film transistor with suppressed off-current and V.sub.th'19955,371,397'Solid-state imaging array including focusing elements'19945,238,864'Method of making solid-state imaging device'19935,191,399'Solid-state imaging device with improved photodetector'19935,126,811'Charge transfer device with electrode structure of high transfer efficiency'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2007Patents assigned to MITSUBISHI ELECTRIC CORP (42)· patent assignee history
1992–1996Based in Itami, JP· patent location history
1993Based in Itam, JP· patent location history
1995–2000Patents assigned to RYODEN SEMICONDUCTOR SYST ENG (3)· patent assignee history
1995–2005Based in Hyogo, JP· patent location history
1998–2013Based in Tokyo, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (26)· patent assignee history
2011–2013Patents assigned to MAEGAWA SHIGETO (2)· patent assignee history
2011–2013Patents assigned to RENESAS ELECTRONICS CORP (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP421992–2007
RENESAS TECH CORP262004–2010
RYODEN SEMICONDUCTOR SYST ENG31995–2000
MAEGAWA SHIGETOself22011–2013
RENESAS ELECTRONICS CORP22011–2013
Locations
LocationPatentsSpan
Tokyo, JP461998–2013
Hyogo, JP191995–2005
Itami, JP51992–1996
Itam, JP11993