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Inventor

Tamio Ikehashi

Inventor
Yokohama-shi, Kanagawa, JP

Overview

77→
Patents
1999–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 77 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores21%
H01GCapacitors10%
B81BMicrostructural devices or systems, e.g. micromechanical devices9%
H01HElectric switches8%
H02NElectric machines not otherwise provided for8%
G01CMeasuring distances, levels or bearings6%
H10DInorganic electric semiconductor devices6%
H10NElectric solid-state devices not otherwise provided for4%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure3%
PatentTitleYear
11,092,440Vibration device and method for controlling the same202110,892,732Resonator and device including the same202110,794,886Gas detection device202010,767,992Gyro sensor system202010,760,910Sensor device employing MEMS202010,763,815IC chip and method of determining a fuse to be cut off202010,598,647Gas sensor and manufacturing method of the same202010,541,671Vibration device202010,401,172Angular velocity acquisition device and electronic component for acquiring angular velocity201910,330,472Angular velocity acquisition device201910,281,444Gas detection device201910,107,626Method for acquiring angular velocity of gyro sensor and device for doing the same20189,921,238'Sensor and its manufacturing method'20189,914,637'Electronic device using MEMS technology'20189,793,055'Electronic device and method of manufacturing the same'20179,776,854'Device and method of manufacturing the same'20179,493,339'Micro electro mechanical system'20169,490,073'Electronic device'20169,274,017'MEMS device'20169,230,744'MEMS device and method of manufacturing the same'20168,921,958'MEMS element'20148,873,218'Actuator'20148,604,725'Semiconductor device and drive method of electrostatic actuator'20138,564,928'MEMS device having a movable structure'20138,503,157'MEMS device'20138,461,743'Electrostatic actuator apparatus and method of driving the same'20138,274,324'Electrostatic actuator apparatus'20128,174,306'Electrostatic actuator apparatus'20128,169,770'Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator'20128,138,655'Electrostatic actuator with electrodes having varying distances at different portions'20128,044,552'Actuator driving system in which a drive voltage and number of electrodes parts driven changes in accordance with temperature'20118,013,667'Voltage generating circuit for electrostatic MEMS actuator'20117,940,514'MEMS device using an actuator'20117,885,051'Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator'20117,795,778'Electrostatic actuator driving system having plural actuators and a temperature detector'20107,751,173'Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator'20107,633,826'Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used'20097,485,958'Device with beam structure, and semiconductor device'20097,466,060'Piezoelectric driving type MEMS apparatus'20087,446,457'Semiconductor device using piezoelectric actuator formed by use of MEMS technique'20087,427,797'Semiconductor device having actuator'20087,317,652'Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used'20087,313,022'Non-volatile semiconductor memory'20077,177,134'Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device'20077,145,284'Actuator and micro-electromechanical system device'20067,057,947'SEMICONDUCTOR DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY, SYSTEM INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES OR NONVOLATILE SEMICONDUCTOR MEMORIES, ELECTRIC CARD INCLUDING SEMICONDUCTOR DEVICE OR NONVOLATILE SEMICONDUCTOR MEMORY, AND ELECTRIC DEVICE WITH WHICH THIS ELECTRIC CARD CAN BE USED'20067,027,334'Semiconductor memory device'20066,999,353'Semiconductor memory device including page latch circuit'20066,970,388'Non-volatile semiconductor memory'20056,901,012'Semiconductor memory device having a power-on reset circuit'20056,888,770'Semiconductor memory device'20056,859,401'Fail number detecting circuit of flash memory'20056,845,047'Read circuit of nonvolatile semiconductor memory'20056,825,524'Semiconductor integrated circuit device'20046,826,116'Semiconductor memory device including page latch circuit'20046,819,596'Semiconductor memory device with test mode'20046,801,060'Semiconductor integrated circuit'20046,771,546'Semiconductor memory device and method of controlling the same'20046,731,538'Semiconductor memory device including page latch circuit'20046,674,318'Semiconductor integrated circuit'20046,674,668'Read circuit on nonvolatile semiconductor memory'20046,657,896'Fail number detecting circuit of flash memory'20036,646,930'Non-volatile semiconductor memory'20036,643,180'Semiconductor memory device with test mode'20036,642,757'Semiconductor memory device having a power-on reset circuit'20036,600,303'Current source circuit'20036,590,444'Semiconductor integrated circuit with a down converter for generating an internal voltage'20036,522,583'Nonvolatile semiconductor memory'20036,507,518'Fail number detecting circuit of flash memory'20036,469,573'Semiconductor integrated circuit'20026,438,038'Read circuit of nonvolatile semiconductor memory'20026,373,748'Nonvolatile semiconductor memory'20026,351,179'Semiconductor integrated circuit having active mode and standby mode converters'20026,337,807'Electrically erasable and programmable semiconductor memory'20026,320,231'Semiconductor device for protecting a semiconductor chip from damage due to electrostatic discharge'20016,278,639'Booster circuit having booster cell sections connected in parallel, voltage generating circuit and semiconductor memory which use such booster circuit'20015,986,929'Multi-level nonvolatile semiconductor memory device'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2021Patents assigned to TOSHIBA KK (76)· patent assignee history
1999–2007Based in Kamakura, JP· patent location history
2003–2021Based in Yokohama-shi, Kanagawa, JP· patent location history
2004–2021Based in Kanagawa, JP· patent location history
2012–2016Patents assigned to IKEHASHI TAMIO (11)· patent assignee history
2013–2014Patents assigned to MASUNISHI KEI (2)· patent assignee history
2013–2016Patents assigned to SAITO TOMOHIRO (2)· patent assignee history
2013–2014Patents assigned to TOMIZAWA YASUSHI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK761999–2021
IKEHASHI TAMIOself112012–2016
MASUNISHI KEI22013–2014
SAITO TOMOHIRO22013–2016
TOMIZAWA YASUSHI22013–2014
Locations
LocationPatentsSpan
Yokohama-shi, Kanagawa, JP412003–2021
Kamakura, JP201999–2007
Kanagawa, JP162004–2021