Inventor

Rhett B. Jucha

Inventor

Celeste, TX, US

Overview

1985–1993

Patent span

Electricity

Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1034%

C23CCoating metallic material18%

C23FNon-mechanical removal of metallic material from surface18%

H01JElectric discharge tubes or discharge lamps14%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%

C04BLime, magnesia2%

C30BSingle-crystal growth2%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%

PatentTitleYear

5,262,610'Low particulate reliability enhanced remote microwave plasma discharge device'1993 5,248,636'Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation'1993 5,138,973'Wafer processing apparatus having independently controllable energy sources'1992 4,997,520'Method for etching tungsten'1991 4,988,644'Method for etching semiconductor materials using a remote plasma generator'1991 4,923,562'Processing of etching refractory metals'1990 4,915,777'Method for etching tungsten'1990 4,911,103'Processing apparatus and method'1990 4,891,488'Processing apparatus and method'1990 4,891,087'Isolation substrate ring for plasma reactor'1990 4,886,570'Processing apparatus and method'1989 4,878,994'Method for etching titanium nitride local interconnects'1989 4,874,723'Selective etching of tungsten by remote and in situ plasma generation'1989 4,867,841'Method for etch of polysilicon film'1989 4,863,558'Method for etching tungsten'1989 4,855,016'Method for etching aluminum film doped with copper'1989 4,849,068'Apparatus and method for plasma-assisted etching'1989 4,849,067'Method for etching tungsten'1989 4,842,687'Method for etching tungsten'1989 4,842,676'Process for etch of tungsten'1989 4,842,686'Wafer processing apparatus and method'1989 4,838,990'Method for plasma etching tungsten'1989 4,838,984'Method for etching films of mercury-cadmium-telluride and zinc sulfid'1989 4,828,649'Method for etching an aluminum film doped with silicon'1989 4,822,450'Processing apparatus and method'1989 4,820,377'Method for cleanup processing chamber and vacuum process module'1989 4,758,305'Contact etch method'1988 4,685,999'Apparatus for plasma assisted etching'1987 4,659,413'Automated single slice cassette load lock plasma reactor'1987 4,502,915'Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–1993Patents assigned to TEXAS INSTRUMENTS INC (29)· patent assignee history

1985–1993Based in Celeste, TX, US· patent location history

1993Patents assigned to US ARMY (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TEXAS INSTRUMENTS INC	29	1985–1993
US ARMY	1	1993

Locations

Location	Patents	Span
Celeste, Texas, US	30	1985–1993