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Inventor

Lester W. Herron

Inventor
Hopewell Junction, NY, US

Overview

49→
Patents
1977–2007
Patent span
Electricity
Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1026%
H05KPrinted circuits20%
Y10TTechnical subjects covered by former us classification15%
C04BLime, magnesia12%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
B22FWorking metallic powder4%
C22CAlloys3%
B26FPerforating2%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
C03CChemical composition of glasses, glazes or vitreous enamels2%
PatentTitleYear
7,255,153'High performance integrated MLC cooling device for high power density ICS and method for manufacturing'20076,827,505'Optoelectronic package structure and process for planar passive optical and optoelectronic devices'20046,762,119'Method of preventing solder wetting in an optical device using diffusion of Cr'20046,528,145'Polymer and ceramic composite electronic substrates'20036,475,555'Process for screening features on an electronic substrate with a low viscosity paste'20026,373,133'Multi-chip module and heat-sink cap combination'20026,358,439'Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias'20026,341,417'Pre-patterned substrate layers for being personalized as needed'20026,306,528'Method for the controlling of certain second phases in aluminum nitride'20016,272,957'Flex die punching apparatus and method'20016,231,707'Method of forming a multilayer ceramic substrate with max-punched vias'20016,200,373'Method for controlling of certain second phases in aluminum nitride'20016,124,041'Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias'20006,116,127'Flex die punching apparatus and method'20006,037,193'Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity'20006,004,624'Method for the controlling of certain second phases in aluminum nitride'19995,981,310'Multi-chip heat-sink cap assembly'19995,974,931'Flex die punching apparatus and method'19995,945,735'Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity'19995,932,043'Method for flat firing aluminum nitride/tungsten electronic modules'19995,925,443'Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias'19995,888,446'Method of forming an aluminum nitride article utilizing a platinum catalyst'19995,773,377'Low temperature sintered, resistive aluminum nitride ceramics'19985,763,093'Aluminum nitride body having graded metallurgy'19985,682,589'Aluminum nitride body having graded metallurgy'19975,552,232'Aluminum nitride body having graded metallurgy'19965,552,107'Aluminum nitride body having graded metallurgy'19965,541,145'Low temperature sintering route for aluminum nitride ceramics'19965,541,005'Large ceramic article and method of manufacturing'19965,480,503'Process for producing circuitized layers and multilayer ceramic sub-laminates and composites thereof'19965,439,636'Large ceramic articles and method of manufacturing'19955,338,900'Structures for electrically conductive decals filled with inorganic insulator material'19945,232,548'Discrete fabrication of multi-layer thin film, wiring structures'19935,139,975'Sintering arrangement for enhancing removal of carbon from ceramic substrate laminates'19925,130,067'Method and means for co-sintering ceramic/metal MLC substrates'19925,108,541'Processes for electrically conductive decals filled with inorganic insulator material'19925,053,361'Setter tile for use in sintering of ceramic substrate laminates'19914,971,738'Enhanced removal of carbon from ceramic substrate laminates'19904,879,156'Multilayered ceramic substrate having solid non-porous metal conductors'19894,786,674'Diffusion isolation layer for maskless cladding process'19884,776,978'Method of controlling the sintering of metal particles'19884,753,694'Process for forming multilayered ceramic substrate having solid metal conductors'19884,671,928'Method of controlling the sintering of metal particles'19874,627,160'Method for removal of carbonaceous residues from ceramic structures having internal metallurgy'19864,598,107'Stepwise/ultimate density milling'19864,582,722'Diffusion isolation layer for maskless cladding process'19864,340,436'Process for flattening glass-ceramic substrates'19824,234,367'Method of making multilayered glass-ceramic structures having an internal distribution of copper-based conductors'19804,060,662'Article having a surface layer of catalytic ash by-product of coal combustion'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977Patents assigned to UNIV ILLINOIS (1)· patent assignee history
1977Based in St. Joseph, IL, US· patent location history
1980–2007Patents assigned to IBM (46)· patent assignee history
1980–2002Based in Hopewell Junction, NY, US· patent location history
1996–1998Patents assigned to CARBORUNDUM CO (4)· patent assignee history
1998–1999Patents assigned to CRYSTALLINE MATERIALS CORP (2)· patent assignee history
2000Based in Hopewell Jct., NY, US· patent location history
2002–2007Based in New Paltz, NY, US· patent location history
2004Patents assigned to INTERNAT BUSSINESS MACHINES CO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM461980–2007
CARBORUNDUM CO41996–1998
CRYSTALLINE MATERIALS CORP21998–1999
INTERNAT BUSSINESS MACHINES CO12004
UNIV ILLINOIS11977
Locations
LocationPatentsSpan
Hopewell Junction, New York, US411980–2002
New Paltz, New York, US62002–2007
Hopewell Jct., New York, US12000
St. Joseph, Illinois, US11977