Inventor

GEORGIOS VELLIANITIS

Inventor
BE

Overview

76→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 76 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices28%
H10BElectronic memory devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures4%
H10NElectric solid-state devices not otherwise provided for4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
G11CStatic stores1%
H10KOrganic electric solid-state devices1%
H03KPulse technique0%
PatentTitleYear
12,563,989Semiconductor device and method for forming the same202612,543,323Ferroelectric memory device with relaxation layers202612,538,522Access transistor including a metal oxide barrier layer and methods for forming the same202612,513,908Vertically stacked FeFETs with common channel202512,490,456Multigate device having reduced contact resistivity202512,453,295Semiconductor structure and manufacturing method thereof202512,414,303Ferroelectric device and wave computing device202512,402,355Access transistor including a metal oxide barrier layer and methods for forming the same202512,363,970Germanium tin oxide-containing semiconductor device and methods for forming the same202512,363,957Semiconductor device and method of fabricating the same202512,349,361Ferroelectric memory device and method of forming the same202512,324,360Semiconductor structure and method of forming the same202512,310,063Method for forming semiconductor device with transistors on opposite sides of a dielectric layer202512,230,716Semiconductor structure with thin film transistor202512,218,198Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor202512,206,024Transistors including crystalline raised active regions and methods for forming the same202512,191,375Ferroelectric channel field effect transistor202512,167,607Ferroelectric memory device and method of forming the same202412,166,039Complementary metal-oxide-semiconductor device and method of manufacturing the same202412,166,084Semiconductor device and manufacturing method thereof202412,159,942Semiconductor device and method for manufacturing the same202412,148,828Semiconductor device and manufacturing method thereof202412,148,814Semiconductor device202412,080,771Multigate device having reduced contact resistivity202412,074,220Formation of semiconductor arrangement comprising semiconductor column202412,057,489Ferroelectric field effect transistor202412,051,702Crystalline semiconductor layer formed in BEOL processes202412,034,052Semiconductor device and manufacturing method thereof202412,027,632Semiconductor structure with barrier and method for manufacturing the same202412,002,860Semiconductor device and fabrication method thereof202411,967,647Localized heating in laser annealing process202411,955,551Semiconductor device and manufacturing method thereof202411,949,020Transistor, integrated circuit, and manufacturing method202411,942,147Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same202411,916,144Semiconductor device and manufacturing method thereof202411,916,113Semiconductor device and manufacturing method thereof202411,901,451Method of fabricating semiconductor device202411,869,975Thin-film transistors and method for manufacturing the same202411,869,949Semiconductor device and manufacturing method thereof202411,856,874Semiconductor structure and manufacturing method thereof202311,848,385Localized protection layer for laser annealing process202311,791,420Semiconductor device and method for manufacturing the same202311,791,395Ferroelectric field effect transistor202311,784,234Ferroelectric channel field effect transistor202311,769,798Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor202311,764,290Semiconductor device202311,764,289Method of manufacturing a semiconductor device and a semiconductor device202311,751,487Semiconductor device and method of forming the same202311,749,723Semiconductor device and manufacturing method thereof202311,721,721Germanium nitride layers on semiconductor structures, and methods for forming the same202311,710,775Ferroelectric field effect transistor202311,677,004Strained channel field effect transistor202311,647,635Ferroelectric memory device and method of forming the same202311,594,603Multigate device having reduced contact resistivity202311,587,786Crystalline semiconductor layer formed in BEOL processes202311,574,927Semiconductor devices and method for manufacturing the same202311,569,382Semiconductor device and method of fabricating the same202311,569,352Protrusion field-effect transistor and methods of making the same202311,557,678Transistor, integrated circuit, and manufacturing method202311,527,552Ferroelectric memory device and method of forming the same202211,482,609Ferroelectric channel field effect transistor202211,450,748Semiconductor device and manufacturing method thereof202211,430,512Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same202211,411,089Semiconductor device and manufacturing method thereof202211,404,543Semiconductor device and manufacturing method thereof202211,387,362Semiconductor device and manufacturing method thereof202211,335,811Semiconductor arrangement comprising buffer layer and semiconductor columns over the buffer layer and formation thereof202211,322,495Complementary metal-oxide-semiconductor device and method of manufacturing the same202211,302,801Semiconductor device202211,302,820Localized protection layer for laser annealing process202211,296,236Semiconductor device and manufacturing method thereof202211,289,477Semiconductor structure with low defect202211,289,580Semiconductor device202211,264,498Semiconductor device and method of fabricating the same202211,227,933Ferroelectric field effect transistor using charge trapping band misalignment and methods of forming the same202211,189,490Method of manufacturing a semiconductor device and a semiconductor device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (76)· patent assignee history
2021–2026Based in BE· patent location history
2023–2024Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD762021–2026
Locations
LocationPatentsSpan
BE682021–2026
TW82023–2024