LexDanaLexDanabeta
Inventor

Kouji Matsuo

Inventor
Yokohama, JP

Overview

62→
Patents
1988–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 62 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices25%
H10BElectronic memory devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G01NInvestigating or analysing materials by determining their chemical or physical properties9%
H01LSemiconductor devices8%
H10NElectric solid-state devices not otherwise provided for5%
Y10TTechnical subjects covered by former us classification4%
G11CStatic stores4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
10,629,810Resistance-change type memory device202010,546,896Storage device having variable resistance layer202010,475,851Storage device and method of manufacturing storage device201910,319,730Memory device having a plurality of first conductive pillars penetrating through a stacked film201910,211,166Semiconductor device and method of manufacturing the same201910,083,979Semiconductor device, manufacturing method and controlling method of semiconductor device20189,793,293'Semiconductor device and method for manufacturing same'20179,153,779'Resistance change memory element and resistance change memory'20159,087,770'Semiconductor memory device'20159,040,950'Nonvolatile memory device and method for manufacturing same'20159,006,697'Resistance change element and nonvolatile memory device'20158,668,385'Temperature sensor'20148,633,535'Nonvolatile semiconductor memory'20148,486,828'Semiconductor device manufacturing method'20138,236,641'Semiconductor device with extension structure and method for fabricating the same'20128,215,153'Gas sensor and gas sensor unit'20128,156,790'Sensor and method of producing sensor'20128,148,717'Manufacturing method for semiconductor device and semiconductor device'20128,138,552'Semiconductor device and method of manufacturing the same'20127,989,903'Semiconductor device with extension structure and method for fabricating the same'20117,981,795'Semiconductor device manufacturing method'20117,939,891'Semiconductor device having MISFETs and manufacturing method thereof'20117,935,235'Gas sensor with sealing structure'20117,902,603'Semiconductor device and method of manufacturing the same'20117,902,030'Manufacturing method for semiconductor device and semiconductor device'20117,781,848'Semiconductor device with extension structure and method for fabricating the same'20107,772,076'Method of manufacturing semiconductor device using dummy gate wiring layer'20107,767,535'Semiconductor device and method of manufacturing the same'20107,745,073'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same'20107,674,143'Sensor and method of producing sensor'20107,652,328'Semiconductor device and method of manufacturing the same'20107,642,162'Semiconductor device and method of manufacturing the same'20107,602,013'Semiconductor device with recessed channel'20097,579,231'Semiconductor device and method of manufacturing the same'20097,461,538'Sensor and method of producing sensor'20087,459,246'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same'20087,430,894'Gas sensor'20087,340,942'Sensor including a sensor element having electrode terminals spaced apart from a connecting end thereof'20087,341,650'Method of manufacturing sensor and sensor'20087,208,797'Semiconductor device'20077,179,702'Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same'20077,179,569'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same'20077,172,955'Silicon composition in CMOS gates'20076,992,357'Semiconductor device and method of manufacturing the same'20066,977,415'Semiconductor device including a gate insulating film on a recess and source and drain extension regions'20056,967,379'Semiconductor device including metal insulator semiconductor field effect transistor'20056,964,893'Semiconductor device and method of fabricating the same'20056,887,747'Method of forming a MISFET having a schottky junctioned silicide'20056,833,596'Semiconductor device and method of manufacturing the same'20046,815,279'Manufacturing method of CMOS devices'20046,770,402'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same'20046,737,716'Semiconductor device and method of manufacturing the same'20046,737,309'Complementary MISFET'20046,548,023'Gas sensor'20036,510,728'Gas sensor including inorganic powder filling gap between measuring element and metallic shell'20036,500,322'Gas sensor'20026,465,290'Method of manufacturing a semiconductor device using a polymer film pattern'20026,395,159'Oxygen sensor'20026,376,888'Semiconductor device and method of manufacturing the same'20026,346,438'Method of manufacturing a semiconductor device'20026,310,367'MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layer'20014,734,087'High load transmission belt'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2015Patents assigned to TOSHIBA KK (39)· patent assignee history
2001–2014Based in Yokohama, JP· patent location history
2002–2014Patents assigned to NGK SPARK PLUG CO (13)· patent assignee history
2002–2018Based in Aichi, JP· patent location history
2002–2014Based in Kasugai, JP· patent location history
2011–2015Based in Kanagawa, JP· patent location history
2012–2015Patents assigned to MATSUO KOUJI (9)· patent assignee history
2012–2014Patents assigned to IINUMA TOSHIHIKO (2)· patent assignee history
2017–2020Patents assigned to TOSHIBA MEMORY CORP (7)· patent assignee history
2017–2020Based in Toyota-shi, Aichi-ken, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK392001–2015
NGK SPARK PLUG CO132002–2014
MATSUO KOUJIself92012–2015
TOSHIBA MEMORY CORP72017–2020
IINUMA TOSHIHIKO22012–2014
Locations
LocationPatentsSpan
Yokohama, JP352001–2014
Aichi, JP132002–2018
Toyota-shi, Aichi-ken, JP62017–2020
Kanagawa, JP32011–2015
Kasugai, JP32002–2014