LexDanaLexDanabeta
Inventor

Takayoshi Kogano

Inventor
Iruma, JP

Overview

13→
Patents
1990–2005
Patent span
Electricity
Primary field (CPC H)

Patents· 13 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices18%
H10BElectronic memory devices18%
H10DInorganic electric semiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
C23CCoating metallic material3%
C30BSingle-crystal growth3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
6,894,334'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20056,548,847'SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM'20036,342,412'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20026,169,324'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20016,127,255'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20005,811,316'Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring'19985,780,882'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19985,739,589'Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same'19985,557,147'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19965,331,191'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19945,202,275'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19935,080,039'Processing apparatus'19924,957,781'Processing apparatus'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2003Patents assigned to HITACHI LTD (12)· patent assignee history
1990–2005Patents assigned to HITACHI VLSI ENG (12)· patent assignee history
1990Patents assigned to HITACHI TOKYO ELECTRONICS CO (1)· patent assignee history
1990Based in Tokyo, JP· patent location history
1992Patents assigned to HITACHI TOKYO ELECTRONICS (1)· patent assignee history
1992Based in Ohme, JP· patent location history
1993–2005Based in Iruma, JP· patent location history
1996Patents assigned to HITACHI ULSI ENG CORP (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD121990–2003
HITACHI VLSI ENG121990–2005
HITACHI TOKYO ELECTRONICS11992
HITACHI TOKYO ELECTRONICS CO11990
HITACHI ULSI ENG CORP11996
Locations
LocationPatentsSpan
Iruma, JP111993–2005
Ohme, JP11992
Tokyo, JP11990