Inventor
HSIN-HAO YEH
Inventor
TW
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
C23CCoating metallic material11%
PatentTitleYear
12,261,036Forming low-stress silicon nitride layer through hydrogen treatment202512,051,603System and method for annealing die and wafer202411,855,213FinFET device and method of forming same202311,830,727Forming low-stress silicon nitride layer through hydrogen treatment202311,393,674Forming low-stress silicon nitride layer through hydrogen treatment202211,296,225FinFET device and method of forming same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (6)· patent assignee history
2022–2025Based in TW· patent location history
2024Patents assigned to SYSTEM FOR ANNEALING DIE AND WAFER (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 6 | 2022–2025 |
| SYSTEM FOR ANNEALING DIE AND WAFER | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 6 | 2022–2025 |