Inventor
Dechao Guo
Inventor
Niskayuna, NY, US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures4%
PatentTitleYear
11,011,517Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications202110,971,399Oxygen-free replacement liner for improved transistor performance202110,971,626Interface charge reduction for SiGe surface202110,957,696Self-aligned metal gate with poly silicide for vertical transport field-effect transistors202110,943,989Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization202110,937,648Gate stack designs for analog and logic devices in dual channel Si/SiGe CMOS202110,892,181Semiconductor device with mitigated local layout effects2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021Patents assigned to IBM (7)· patent assignee history
2021Based in Niskayuna, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 7 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niskayuna, New York, US | 7 | 2021 |