Inventor
Benno Orschel
Inventor
St. Louis, MO, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth16%
G05BControl or regulating systems in general16%
Y10TTechnical subjects covered by former us classification16%
G01BMeasuring length, thickness or similar linear dimensions8%
Y02PClimate change mitigation technologies in the production or processing of goods8%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
G01RMeasuring electric variables5%
G06FElectric digital data processing5%
G06TImage data processing or generation, in general5%
H01LSemiconductor devices5%
PatentTitleYear
10,361,106Methods and systems for preventing unsafe operations201910,030,964Systems and methods for performing phase shift interferometry while a wafer is vibrating201810,032,659Methods and systems for preventing unsafe operations201810,007,255Systems and methods for controlling temperatures in an epitaxial reactor20189,727,045'Method and system for a meta-recipe control software architecture'20179,459,935'Methods and systems for deterministic and multithreaded script objects and script engine'20169,384,540'Systems and methods for interferometric phase measurement'20169,330,014'Method and system for full resolution real-time data logging'20168,673,075'Procedure for in-situ determination of thermal gradients at the crystal growth front'20148,641,822'Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process'20148,545,623'Method and apparatus for controlling the growth process of a monocrystalline silicon ingot'20138,496,765'Method for correcting speed deviations between actual and nominal pull speed during crystal growth'20138,221,545'Procedure for in-situ determination of thermal gradients at the crystal growth front'20128,012,255'Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process'20117,521,954'Method for determining a minority carrier diffusion length using surface photo voltage measurements'20096,526,372'Method and device for determining the dependence of a first measuring quantity on a second measuring quantity'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2014Based in Salem, OR, US· patent location history
2009–2014Patents assigned to SUMCO CORP (6)· patent assignee history
2009Based in Saga, JP· patent location history
2011–2014Patents assigned to SUMCO PHOENIX CORP (6)· patent assignee history
2012–2014Patents assigned to ORSCHEL BENNO (5)· patent assignee history
2012–2014Patents assigned to TAKANASHI KEIICHI (5)· patent assignee history
2013Based in St. Charles, MO, US· patent location history
2016–2018Patents assigned to SUNEDISON SEMICONDUCTOR LTD UEN201334164H (5)· patent assignee history
2016–2019Based in St. Louis, MO, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMCO CORP | 6 | 2009–2014 |
| SUMCO PHOENIX CORP | 6 | 2011–2014 |
| ORSCHEL BENNOself | 5 | 2012–2014 |
| SUNEDISON SEMICONDUCTOR LTD UEN201334164H | 5 | 2016–2018 |
| TAKANASHI KEIICHI | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| St. Louis, MO, US | 8 | 2016–2019 |
| Salem, OR, US | 6 | 2003–2014 |
| St. Charles, MO, US | 1 | 2013 |
| Saga, JP | 1 | 2009 |