Inventor
Wei D. Wang
Inventor
San Jose, CA, US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material26%
H01JElectric discharge tubes or discharge lamps21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H01LSemiconductor devices6%
H10DInorganic electric semiconductor devices5%
C09DCoating compositions, e.g. paints, varnishes or lacquers1%
C25DProcesses for the electrolytic or electrophoretic production of coatings1%
F04DNon-positive-displacement pumps1%
F28FDetails of heat-exchange and heat-transfer apparatus, of general application1%
PatentTitleYear
9,666,416'Apparatus and method for depositing electronically conductive pasting material'20179,340,678'Process to form aqueous precursor and aluminum oxide film'20169,224,582'Apparatus and method for depositing electrically conductive pasting material'20159,217,611'Air duct and heat dissipation device having the same'20158,895,450'Low resistivity tungsten PVD with enhanced ionization and RF power coupling'20148,558,299'Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming'20138,216,933'Krypton sputtering of low resistivity tungsten'20128,119,525'Process for selective growth of films during ECP plating'20127,790,604'Krypton sputtering of thin tungsten layer for integrated circuits'20106,991,709'Multi-step magnetron sputtering process'20066,899,796'Partially filling copper seed layer'20056,884,329'Diffusion enhanced ion plating for copper fill'20056,837,975'Asymmetric rotating sidewall magnet ring for magnetron sputtering'20056,787,006'Operating a magnetron sputter reactor in two modes'20046,758,949'Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities'20046,743,342'Sputtering target with a partially enclosed vault'20046,730,196'Auxiliary electromagnets in a magnetron sputter reactor'20046,709,553'Multiple-step sputter deposition'20046,485,618'Integrated copper fill process'20026,451,177'Vault shaped target and magnetron operable in two sputtering modes'20026,436,251'Vault-shaped target and magnetron having both distributed and localized magnets'20026,413,382'Pulsed sputtering with a small rotating magnetron'20026,358,376'Biased shield in a magnetron sputter reactor'20026,352,629'Coaxial electromagnet in a magnetron sputtering reactor'20026,277,249'Integrated process for copper via filling using a magnetron and target producing highly energetic ions'20016,274,008'Integrated process for copper via filling'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2017Patents assigned to APPLIED MATERIALS INC (24)· patent assignee history
2001–2006Based in Santa Clara, CA, US· patent location history
2004–2017Based in San Jose, CA, US· patent location history
2012–2015Patents assigned to WANG WEI D (4)· patent assignee history
2012–2013Patents assigned to GANDIKOTA SRINIVAS (2)· patent assignee history
2012Patents assigned to CHUNG HUA (1)· patent assignee history
2013Patents assigned to CAO YONG (1)· patent assignee history
2015Based in New Taipei, TW· patent location history
2016Based in Corvallis, OR, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 24 | 2001–2017 |
| WANG WEI Dself | 4 | 2012–2015 |
| GANDIKOTA SRINIVAS | 2 | 2012–2013 |
| CAO YONG | 1 | 2013 |
| CHUNG HUA | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 13 | 2004–2017 |
| Santa Clara, California, US | 11 | 2001–2006 |
| Corvallis, OR, US | 1 | 2016 |
| New Taipei, TW | 1 | 2015 |