Inventor
Jun-Chi Huang
Inventor
Taichung, TW
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices13%
H10BElectronic memory devices10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
B82YSpecific uses or applications of nanostructures9%
C09DCoating compositions, e.g. paints, varnishes or lacquers9%
C25DProcesses for the electrolytic or electrophoretic production of coatings9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices6%
H01LSemiconductor devices6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
10,815,582Damascene template for directed assembly and transfer of nanoelements202010,233,559High rate electric field driven nanoelement assembly on an insulated surface201910,208,394Damascene template for directed assembly and transfer of nanoelements20199,497,855'High rate electric field driven nanoelement assembly on an insulated surface'20169,365,946'Damascene template for directed assembly and transfer of nanoelements'20169,355,848'Semiconductor structure and method for forming the same'20169,145,618'High rate electric field driven nanoelement assembly on an insulated surface'20158,546,962'Mark structure and method for measuring alignment accuracy between former layer and latter layer'20138,415,732'Trench-capacitor DRAM device and manufacture method thereof'20137,566,932'Static random access memory unit'20097,563,671'Method for forming trench capacitor and memory cell'20097,541,634'Trench capacitor'20097,407,852'Trench capacitor of a DRAM and fabricating method thereof'20087,351,634'Trench-capacitor DRAM device and manufacture method thereof'20087,335,553'Method for forming trench capacitor and memory cell'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2016Patents assigned to UNITED MICROELECTRONICS CORP (9)· patent assignee history
2008–2016Based in Taichung, TW· patent location history
2013Patents assigned to HUANG JUN-CHI (2)· patent assignee history
2015–2020Patents assigned to UNIV NORTHEASTERN (6)· patent assignee history
2015Patents assigned to BUSNAINA AHMED (1)· patent assignee history
2015Patents assigned to HUANG JUN (1)· patent assignee history
2015–2020Based in Malden, MA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 9 | 2008–2016 |
| UNIV NORTHEASTERN | 6 | 2015–2020 |
| HUANG JUN-CHIself | 2 | 2013 |
| BUSNAINA AHMED | 1 | 2015 |
| HUANG JUNself | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taichung, TW | 9 | 2008–2016 |
| Malden, Massachusetts, US | 6 | 2015–2020 |