Inventor
WEN-JUNG LIAO
Inventor
TW
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices37%
H10DInorganic electric semiconductor devices37%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
PatentTitleYear
12,419,071High electron mobility transistor and method for fabricating the same202512,342,561High-electron mobility transistor and fabrication method thereof202512,328,889High electron mobility transistor and method for fabricating the same202512,289,914Nitride semiconductor device and manufacturing method thereof202512,266,701High electron mobility transistor and method for forming the same202512,266,696Manufacturing method of semiconductor device202512,206,000High electron mobility transistor and method for forming the same202512,199,176Semiconductor device202512,199,175Manufacturing method for forminginsulating structure of high electron mobility transistor202512,125,885Semiconductor device and manufacturing method thereof202412,125,903High electron mobility transistor and method for fabricating the same202412,113,098Manufacturing method of capacitor structure including patterned conductive layer disposed between two electrodes202412,027,604High electron mobility transistor and method for fabricating the same202411,935,947Enhancement mode high electron mobility transistor202411,894,441High electron mobility transistor and method for fabricating the same202411,810,972Semiconductor device202311,804,544High electron mobility transistor and method for fabricating the same202311,791,407Semiconductor transistor structure with reduced contact resistance and fabrication method thereof202311,749,740High electron mobility transistor and method for fabricating the same202311,742,418Semiconductor device202311,735,644High electron mobility transistor and method for fabricating the same202311,695,049High electron mobility transistor and method for forming the same202311,640,970Capacitor structure including patterned conductive layer disposed between two electrodes and manufacturing method thereof202311,610,989High electron mobility transistor202311,557,669Semiconductor device and fabricating method thereof202311,502,177High electron mobility transistor and fabrication method thereof202211,489,048High electron mobility transistor and fabrication method thereof202211,380,786Insulating structure of high electron mobility transistor and manufacturing method thereof202211,367,779High electron mobility transistor and method for fabricating the same202211,264,492High electron mobility transistor and method for fabricating the same202211,239,338High electron mobility transistor and method for fabricating the same202211,177,377Semiconductive device with mesa structure and method of fabricating the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to UNITED MICROELECTRONICS CORP (32)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 32 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 32 | 2021–2025 |