Inventor
Farhad Moghadam
Inventor
Saratoga, CA, US
Overview
Patents· 53 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%
C23CCoating metallic material26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
Y10TTechnical subjects covered by former us classification6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H01JElectric discharge tubes or discharge lamps3%
B05DProcesses for applying fluent materials to surfaces, in general1%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds1%
B08BCleaning in general1%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
PatentTitleYear
7,799,698'Deposition-selective etch-deposition process for dielectric film gapfill'20107,691,753'Deposition-selective etch-deposition process for dielectric film gapfill'20107,560,377'Plasma processes for depositing low dielectric constant films'20097,514,353'Contact metallization scheme using a barrier layer over a silicide layer'20097,431,585'Apparatus and method for heating substrates'20087,399,388'Sequential gas flow oxide deposition technique'20087,381,052'Apparatus and method for heating substrates'20087,256,139'Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices'20077,227,244'Integrated low k dielectrics and etch stops'20077,160,821'Method of depositing low k films'20077,151,053'Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications'20067,097,886'Deposition process for high aspect ratio trenches'20067,081,414'Deposition-selective etch-deposition process for dielectric film gapfill'20066,958,112'Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation'20056,936,551'Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices'20056,930,061'Plasma processes for depositing low dielectric constant films'20056,926,926'Silicon carbide deposited by high density plasma chemical-vapor deposition with bias'20056,890,850'Method of depositing dielectric materials in damascene applications'20056,869,896'Plasma processes for depositing low dielectric constant films'20056,858,153'Integrated low K dielectrics and etch stops'20056,806,207'Method of depositing low K films'20046,803,325'Apparatus for improving barrier layer adhesion to HDP-FSG thin films'20046,743,737'Method of improving moisture resistance of low dielectric constant films'20046,734,115'Plasma processes for depositing low dielectric constant films'20046,706,138'Adjustable dual frequency voltage dividing plasma reactor'20046,669,858'Integrated low k dielectrics and etch stops'20036,667,248'Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers'20036,660,656'Plasma processes for depositing low dielectric constant films'20036,632,735'Method of depositing low dielectric constant carbon doped silicon oxide'20036,596,655'Plasma processes for depositing low dielectric constant films'20036,593,247'Method of depositing low k films using an oxidizing plasma'20036,583,071'Ultrasonic spray coating of liquid precursor for low K dielectric coatings'20036,562,690'Plasma processes for depositing low dielectric constant films'20036,541,282'Plasma processes for depositing low dielectric constant films'20036,521,546'Method of making a fluoro-organosilicate layer'20036,511,923'Deposition of stable dielectric films'20036,495,470'Contact and via fabrication technologies'20026,448,187'Method of improving moisture resistance of low dielectric constant films'20026,413,583'Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound'20026,410,457'Method for improving barrier layer adhesion to HDP-FSG thin films'20026,383,954'Process gas distribution for forming stable fluorine-doped silicate glass and other films'20026,348,725'Plasma processes for depositing low dielectric constant films'20026,340,435'Integrated low K dielectrics and etch stops'20026,303,523'Plasma processes for depositing low dielectric constant films'20016,245,690'Method of improving moisture resistance of low dielectric constant films'20016,170,428'Symmetric tunable inductively coupled HDP-CVD reactor'20015,883,436'Contact and via fabrication technologies'19995,872,401'Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD'19995,872,064'DSAD process for deposition of inter layer dielectric'19995,426,076'Dielectric deposition and cleaning process for improved gap filling and device planarization'19955,389,581'High density TEOS-based film for intermetal dielectrics'19955,326,723'Method for improving stability of tungsten chemical vapor deposition'19945,260,236'UV transparent oxynitride deposition in single wafer PECVD system'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2002Patents assigned to INTEL CORP (8)· patent assignee history
1993–2009Based in Los Gatos, CA, US· patent location history
2001–2010Patents assigned to APPLIED MATERIALS INC (45)· patent assignee history
2002–2010Based in Saratoga, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 45 | 2001–2010 |
| INTEL CORP | 8 | 1993–2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saratoga, California, US | 29 | 2002–2010 |
| Los Gatos, California, US | 24 | 1993–2009 |