Inventor
Longtu Li
Inventor
Beijing, CN
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C04Bprimary
C04BLime, magnesia25%
C01GCompounds containing metals not covered by subclasses c01d or c01f17%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds17%
H01FMagnets17%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form8%
B82YSpecific uses or applications of nanostructures8%
H01GCapacitors8%
PatentTitleYear
9,266,781'Nano complex oxide doped dielectric ceramic material, preparation method thereof and multilayer ceramic capacitors made from the same'20166,761,839'Material for making hyper frequency multi-layer chip inductors with high performance and low sintering temperature and a process for preparing the material'20046,695,972'Formula and preparation method for multi-layer chip inductor material used in very high frequencies'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2016Patents assigned to UNIV TSINGHUA (2)· patent assignee history
2004Patents assigned to TSINGHUA TONGFANG CO LTD (1)· patent assignee history
2004–2016Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV TSINGHUA | 2 | 2004–2016 |
| TSINGHUA TONGFANG CO LTD | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Beijing, CN | 3 | 2004–2016 |