Inventor
Meihua Shen
Inventor
Fremont, CA, US
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1034%
H01LSemiconductor devices16%
H01JElectric discharge tubes or discharge lamps11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
C23CCoating metallic material7%
H10DInorganic electric semiconductor devices7%
C23FNon-mechanical removal of metallic material from surface6%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10BElectronic memory devices3%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
10,784,086Cobalt etch back202010,658,161Method and apparatus for reducing particle defects in plasma etch chambers202010,304,659Ale smoothness: in and outside semiconductor industry201910,199,235Liner and barrier applications for subtractive metal integration201910,096,487Atomic layer etching of tungsten and other metals20189,984,858ALE smoothness: in and outside semiconductor industry20189,953,843Chamber for patterning non-volatile metals20189,899,234'Liner and barrier applications for subtractive metal integration'20189,870,899'Cobalt etch back'20189,818,633'Equipment front end module for transferring wafers and method of transferring wafers'20179,595,452'Residue free oxide etch'20179,589,853'Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber'20179,570,320'Method to etch copper barrier film'20179,533,332'Methods for in-situ chamber clean utilized in an etching processing chamber'20179,431,268'Isotropic atomic layer etch for silicon and germanium oxides'20169,391,267'Method to etch non-volatile metal materials'20169,257,638'Method to etch non-volatile metal materials'20169,130,158'Method to etch non-volatile metal materials'20158,722,547'Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries'20148,501,626'Methods for high temperature etching a high-K material gate structure'20138,133,817'Shallow trench isolation etch process'20128,101,525'Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer'20127,910,488'Alternative method for advanced CMOS logic gate etch applications'20117,780,862'Device and method for etching flash memory gate stacks comprising high-k dielectric'20107,754,610'Process for etching tungsten silicide overlying polysilicon particularly in a flash memory'20107,718,081'Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes'20107,648,914'Method for etching having a controlled distribution of process results'20107,504,338'Method of pattern etching a silicon-containing hard mask'20097,368,394'Etch methods to form anisotropic features for high aspect ratio applications'20087,064,078'Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme'20066,933,243'High selectivity and residue free process for metal on thin dielectric gate etch application'20056,797,188'Self-cleaning process for etching silicon-containing material'20046,784,110'Method of etching shaped features on a substrate'20046,635,573'Method of detecting an endpoint during etching of a material within a recess'20036,599,437'Method of etching organic antireflection coating (ARC) layers'20036,566,270'Integration of silicon etch and chamber cleaning processes'20036,551,941'Method of forming a notched silicon-containing gate structure'20036,383,941'Method of etching organic ARCs in patterns having variable spacings'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2020Patents assigned to APPLIED MATERIALS INC (20)· patent assignee history
2002–2020Based in Fremont, CA, US· patent location history
2012–2020Patents assigned to SHEN MEIHUA (6)· patent assignee history
2012–2017Patents assigned to GANI NICOLAS (4)· patent assignee history
2012–2013Patents assigned to DESHMUKH SHASHANK (2)· patent assignee history
2015–2020Patents assigned to LAM RES CORP (16)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 20 | 2002–2020 |
| LAM RES CORP | 16 | 2015–2020 |
| SHEN MEIHUAself | 6 | 2012–2020 |
| GANI NICOLAS | 4 | 2012–2017 |
| DESHMUKH SHASHANK | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 38 | 2002–2020 |