Inventor

Yu-chao LIN

Inventor

TW

Overview

2022–2025

Patent span

Electricity

Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary

H10NElectric solid-state devices not otherwise provided for23%

H10BElectronic memory devices20%

H01LSemiconductor devices20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H10DInorganic electric semiconductor devices8%

B82YSpecific uses or applications of nanostructures6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

G11CStatic stores3%

B01DSeparation2%

H10KOrganic electric solid-state devices2%

PatentTitleYear

12,507,600—2025 12,489,370Low power consumption feedback circuit for power supply device2025 12,471,507Memory device and fabrication method thereof2025 12,431,784Controller for power supply device2025 12,426,276Semiconductor device, memory cell and method of forming the same2025 12,408,565Phase-change memory devices2025 12,336,192Method of forming semiconductor device2025 12,324,362Phase-change memory device and method2025 12,317,761Phase-change memory device and method for fabricating the same2025 12,317,515Memory device and semiconductor die having the memory device2025 12,310,049Semiconductor device structure with nanostructure2025 12,256,654Memory cell, method of forming the same, and semiconductor device having the same2025 12,245,526Sidewall protection for PCRAM device2025 12,237,421Semiconductor device structure and method for forming the same2025 12,238,933Semiconductor structures and methods of forming the same2025 12,239,031Memory cell, semiconductor device having the same, and methods of manufacturing the same2025 12,211,844Semiconductor structure2025 12,213,388Memory cell, integrated circuit, and manufacturing method of memory cell2025 12,161,055Memory array, semiconductor chip and manufacturing method of memory array2024 12,151,213Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes2024 12,156,485Memory cell and semiconductor device having the same2024 12,144,268Semiconductor structure and method of manufacture2024 12,142,521Interconnect structure and semiconductor device having the same2024 12,133,476Phase change memory device having tapered portion of the bottom memory layer2024 12,120,968Semiconductor device, memory cell including connecting structure having base portion and pillar portion, and method of forming the same2024 12,102,018Memory stacks and methods of forming the same2024 12,094,771Interconnect structure and method2024 12,040,400Method for forming semiconductor device structure with nanostructure2024 12,041,790Semiconductor device, memory cell and method of forming the same2024 12,010,928Memory cell, semiconductor device having the same, and methods of manufacturing the same2024 11,997,933Phase-change memory device and method2024 11,957,070Semiconductor device, memory cell and method of forming the same2024 11,935,958Semiconductor device structure and method for forming the same2024 11,925,127Phase-change memory device and method2024 11,864,477Memory cell, method of forming the same, and semiconductor device having the same2024 11,825,753Memory cell, integrated circuit, and manufacturing method of memory cell2023 11,818,967Sidewall protection for PCRAM device2023 11,805,712Phase change memory device having tapered portion of the bottom memory layer2023 11,793,092Memory stacks and methods of forming the same2023 11,749,528Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode2023 11,737,287Memory device, method of forming the same, and semiconductor device having the same2023 11,647,682Memory array, semiconductor chip and manufacturing method of memory array2023 11,616,146Semiconductor device structure and method for forming the same2023 11,594,576Semiconductor device, memory cell and method of forming the same2023 11,588,106Method to effectively suppress heat dissipation in PCRAM devices2023 11,545,490Semiconductor structure and method for forming the same2023 11,489,113Semiconductor device, memory cell and method of forming the same2022 11,456,211Method of forming interconnect structure2022 11,450,563Interconnect structure and method2022 11,411,181Phase-change memory device and method2022 11,411,180Phase-change memory device and method2022 11,404,635Memory stacks and methods of forming the same2022 11,393,925Semiconductor device structure with nanostructure2022 11,362,277Sidewall protection for PCRAM device2022 11,342,181Semiconductor devices and methods of manufacture2022 11,342,501Memory cell, method of forming the same, and semiconductor device having the same2022 11,322,619Semiconductor device structure and method for forming the same2022 11,283,011Phase change memory device having tapered portion of the bottom memory layer2022 11,245,071Memory cell, method of forming the same, and semiconductor device having the same2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (57)· patent assignee history

2022–2025Based in TW· patent location history

2025Patents assigned to POWER FOREST TECH CORPORATION (2)· patent assignee history

2025Patents assigned to TAIWAN SEMICONDCUTOR MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	57	2022–2025
POWER FOREST TECH CORPORATION	2	2025
TAIWAN SEMICONDCUTOR MFG COMPANY LTD	1	2025

Locations

Location	Patents	Span
TW	59	2022–2025