Inventor
Akihiro Aiba
Inventor
Ibaraki, JP
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C25Dprimary
C25DProcesses for the electrolytic or electrophoretic production of coatings33%
C23CCoating metallic material24%
C22CAlloys10%
C03BManufacture, shaping, or supplementary processes5%
C07DHeterocyclic compounds5%
C23FNon-mechanical removal of metallic material from surface5%
C30BSingle-crystal growth5%
H05KPrinted circuits5%
Y02PClimate change mitigation technologies in the production or processing of goods5%
Y10TTechnical subjects covered by former us classification5%
PatentTitleYear
9,758,901'Vitreous silica crucible for pulling of silicon single crystal and method for manufacturing the same'20178,814,997'Electroless plating pretreatment agent, electroless plating method using same, and electroless plated object'20148,252,157'Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode'20128,216,438'Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion'20127,943,033'Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode'20117,799,188'Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode'20107,704,307'Electroless palladium plating liquid'20107,648,621'Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion'20107,419,536'Electroless gold plating liquid'20087,396,394'Electroless gold plating solution'20087,393,395'Surface-treating agent for metal'20087,390,354'Electroless gold plating solution'20087,374,651'Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to it'20087,138,040'Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2010Patents assigned to NIPPON MINING CO (7)· patent assignee history
2006–2012Based in Ibaraki, JP· patent location history
2008Patents assigned to NIKKO MATERIALS CO LTD (2)· patent assignee history
2008–2010Based in Kitaibaraki, JP· patent location history
2011–2014Patents assigned to JX NIPPON MINING & METALS CORP (4)· patent assignee history
2012–2014Patents assigned to AIBA AKIHIRO (3)· patent assignee history
2014Patents assigned to IMORI TORU (1)· patent assignee history
2014Based in Hitachi, JP· patent location history
2017Based in Akita, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NIPPON MINING CO | 7 | 2006–2010 |
| JX NIPPON MINING & METALS CORP | 4 | 2011–2014 |
| AIBA AKIHIROself | 3 | 2012–2014 |
| NIKKO MATERIALS CO LTD | 2 | 2008 |
| IMORI TORU | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ibaraki, JP | 7 | 2006–2012 |
| Kitaibaraki, JP | 5 | 2008–2010 |
| Akita, JP | 1 | 2017 |
| Hitachi, JP | 1 | 2014 |