LexDanaLexDanabeta
Inventor

Hua Chung

Inventor
San Jose, CA, US

Overview

111→
Patents
2000–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 111 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
C23CCoating metallic material21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01LSemiconductor devices12%
H10DInorganic electric semiconductor devices9%
C30BSingle-crystal growth3%
H01JElectric discharge tubes or discharge lamps3%
B01DSeparation2%
Y10TTechnical subjects covered by former us classification2%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,804,109Surface treatment of silicon and carbon containing films by remote plasma with organic precursors202010,692,730Silicon oxide selective dry etch process202010,504,717Integrated system and method for source/drain engineering201910,504,723Method and apparatus for selective epitaxy201910,403,492Integration of materials removal and surface treatment in semiconductor device fabrication201910,354,883Surface treatment of silicon or silicon germanium surfaces using organic radicals201910,332,739UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication201910,312,096Methods for titanium silicide formation using TiCl201910,276,688Selective process for source and drain formation201910,269,647Self-aligned EPI contact flow201910,269,574Surface treatment of carbon containing films using organic radicals201910,256,322Co-doping process for n-MOS source drain application201910,224,421Self-aligned process for sub-10nm fin formation201910,205,002Method of epitaxial growth shape control for CMOS applications201910,128,110Method to enhance growth rate for selective epitaxial growth201810,116,012Systems and methods for monitoring and characterizing information handling system use behavior201810,115,607Method and apparatus for wafer outgassing control201810,090,147Integrated system and method for source/drain engineering201810,043,667Integrated method for wafer outgassing reduction20189,978,596Self-aligned multiple spacer patterning schemes for advanced nanometer technology20189,966,271Method for modifying epitaxial growth shape20189,966,438Method of doped germanium formation20189,932,670Method of decontamination of process chamber after in-situ chamber clean20189,929,055'Method to grow thin epitaxial films at low temperature'20189,923,081'Selective process for source and drain formation'20189,881,790'Method to enhance growth rate for selective epitaxial growth'20189,553,147'Trench formation with CD less than 10nm for replacement fin growth'20179,548,201'Self-aligned multiple spacer patterning schemes for advanced nanometer technology'20179,530,637'Fin structure formation by selective etching'20169,530,638'Method to grow thin epitaxial films at low temperature'20169,508,831'Method for fabricating vertically stacked nanowires for semiconductor applications'20169,419,107'Method for fabricating vertically stacked nanowires for semiconductor applications'20169,412,603'Trimming silicon fin width through oxidation and etch'20169,401,310'Method to form trench structure for replacement channel growth'20169,373,546'Self aligned replacement Fin formation'20169,300,015'Systems and methods for monitoring and characterizing information handling system use behavior'20169,287,386'Method for fabricating vertically stacked nanowires for semiconductor applications'20169,214,377'Methods for silicon recess structures in a substrate by utilizing a doping layer'20159,209,279'Self aligned replacement fin formation'20159,031,685'Atomic layer deposition apparatus'20158,993,419'Trench formation with CD less than 10 NM for replacement Fin growth'20158,980,379'Gas distribution showerhead and method of cleaning'20158,910,644'Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas'20148,764,961'Cu surface plasma treatment to improve gapfill window'20148,668,776'Gas delivery apparatus and method for atomic layer deposition'20148,626,330'Atomic layer deposition apparatus'20148,557,094'Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum'20138,324,095'Integration of ALD tantalum nitride for copper metallization'20128,318,266'Enhanced copper growth with ultrathin barrier layer for high performance interconnects'20128,293,328'Enhanced copper growth with ultrathin barrier layer for high performance interconnects'20128,293,647'Bottom up plating by organic surface passivation and differential plating retardation'2012D0664170'Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass'20128,119,525'Process for selective growth of films during ECP plating'20128,070,879'Apparatus and method for hybrid chemical processing'20118,062,422'Method and apparatus for generating a precursor for a semiconductor processing system'20118,027,746'Atomic layer deposition apparatus'20117,892,602'Cyclical deposition of refractory metal silicon nitride'20117,867,896'Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor'20117,860,597'Atomic layer deposition apparatus'20107,846,840'Method for forming tungsten materials during vapor deposition processes'20107,780,785'Gas delivery apparatus for atomic layer deposition'20107,780,788'Gas delivery apparatus for atomic layer deposition'20107,745,333'Methods for depositing tungsten layers employing atomic layer deposition techniques'20107,737,028'Selective ruthenium deposition on copper materials'20107,699,023'Gas delivery apparatus for atomic layer deposition'20107,691,742'Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA'20107,674,715'Method for forming tungsten materials during vapor deposition processes'20107,659,204'Oxidized barrier layer'20107,660,644'Atomic layer deposition apparatus'20107,605,083'Formation of composite tungsten films'20097,597,758'Chemical precursor ampoule for vapor deposition processes'20097,595,263'Atomic layer deposition of barrier materials'20097,591,907'Apparatus for hybrid chemical processing'20097,588,736'Apparatus and method for generating a chemical precursor'20097,524,762'Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA'20097,524,374'Method and apparatus for generating a precursor for a semiconductor processing system'20097,514,358'Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor'20097,494,908'Apparatus for integration of barrier layer and seed layer'20097,465,666'Method for forming tungsten materials during vapor deposition processes'20087,422,637'Processing chamber configured for uniform gas flow'20087,405,158'Methods for depositing tungsten layers employing atomic layer deposition techniques'20087,402,210'Apparatus and method for hybrid chemical processing'20087,384,867'Formation of composite tungsten films'20087,352,048'Integration of barrier layer and seed layer'20087,270,709'Method and apparatus of generating PDMAT precursor'20077,265,048'Reduction of copper dewetting by transition metal deposition'20077,244,683'Integration of ALD/CVD barriers with porous low k materials'20077,241,686'Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA'20077,235,486'Method for forming tungsten materials during vapor deposition processes'20077,211,508'Atomic layer deposition of tantalum based barrier materials'20077,204,886'Apparatus and method for hybrid chemical processing'20077,115,494'Method and system for controlling the presence of fluorine in refractory metal layers'20067,085,616'Atomic layer deposition apparatus'20067,081,271'Cyclical deposition of refractory metal silicon nitride'20067,049,226'Integration of ALD tantalum nitride for copper metallization'20067,041,335'Titanium tantalum nitride silicide layer'20067,033,922'Method and system for controlling the presence of fluorine in refractory metal layers'20066,972,267'Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor'20056,939,801'Selective deposition of a barrier layer on a dielectric material'20056,939,804'Formation of composite tungsten films'20056,936,906'Integration of barrier layer and seed layer'20056,916,398'Gas delivery apparatus and method for atomic layer deposition'20056,905,541'Method and apparatus of generating PDMAT precursor'20056,855,368'Method and system for controlling the presence of fluorine in refractory metal layers'20056,849,545'System and method to form a composite film stack utilizing sequential deposition techniques'20056,838,125'Method of film deposition using activated precursor gases'20056,797,340'Method for depositing refractory metal layers employing sequential deposition techniques'20046,772,072'Method and apparatus for monitoring solid precursor delivery'20046,660,126'Lid assembly for a processing system to facilitate sequential deposition techniques'20036,551,929'Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques'20036,157,120'Shadow mask for color CRT having different vertical pitch for outer periphery of the display than inner portion of the display'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000Based in I-Lan, TW· patent location history
2003–2019Patents assigned to APPLIED MATERIALS INC (103)· patent assignee history
2003–2019Based in San Jose, CA, US· patent location history
2011–2016Patents assigned to CHUNG HUA (15)· patent assignee history
2011–2014Patents assigned to CHEN LING (5)· patent assignee history
2011–2012Patents assigned to CHANG MEI (3)· patent assignee history
2014Based in San Jacinto, CA, US· patent location history
2016–2018Based in Taipei, TW· patent location history
2019–2020Patents assigned to MATTSON TECH INC (5)· patent assignee history
2019–2020Based in Saratoga, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC1032003–2019
CHUNG HUAself152011–2016
CHEN LING52011–2014
MATTSON TECH INC52019–2020
CHANG MEI32011–2012
Locations
LocationPatentsSpan
San Jose, California, US1022003–2019
Saratoga, California, US52019–2020
Taipei, TW22016–2018
San Jacinto, California, US12014
I-Lan, TW12000