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Inventor

Hiroshi Ashihara

Inventor
Toyama, JP

Overview

42→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H01LSemiconductor devices22%
C23CCoating metallic material20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10DInorganic electric semiconductor devices9%
H01JElectric discharge tubes or discharge lamps3%
C01BNon-metallic elements1%
H10BElectronic memory devices1%
C23FNon-mechanical removal of metallic material from surface1%
F02BInternal-combustion piston engines1%
PatentTitleYear
10,720,324Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium202010,388,530Method of manufacturing semiconductor device and substrate processing apparatus201910,388,762Method of manufacturing semiconductor device201910,361,084Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system201910,297,440Method of manufacturing semiconductor device201910,128,128Method of manufacturing semiconductor device having air gap between wirings for low dielectric constant201810,115,583Method of manufacturing semiconductor device20189,916,976'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20189,831,083Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium20179,831,082Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium20179,824,883'Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium'20179,816,183'Substrate processing apparatus'20179,816,182'Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium'20179,812,355'Method of manufacturing semiconductor device'20179,728,409'Method of manufacturing semiconductor device'20179,728,400'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,698,050'Method of manufacturing semiconductor device'20179,673,043'Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and recording medium'20179,659,767'Substrate processing apparatus and method of manufacturing semiconductor device'20179,587,313'Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium'20179,558,937'Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium'20179,536,734'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,508,546'Method of manufacturing semiconductor device'20169,418,855'Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium'20169,368,358'Method of manufacturing a semiconductor device'20169,349,586'Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium'20169,190,299'Apparatus for manufacturing semiconductor device, method of manufacturing semiconductor device, and recording medium'20159,187,826'Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium'20159,190,281'Method of manufacturing semiconductor device'20159,082,797'Substrate processing apparatus and method of manufacturing semiconductor device'20159,059,089'Method of manufacturing semiconductor device'20158,986,450'Substrate processing apparatus and method of manufacturing semiconductor device'20158,925,562'Substrate processing apparatus and method of manufacturing semiconductor device'20157,981,761'Method of manufacturing semiconductor device having MIM capacitor'20117,777,346'Semiconductor integrated circuit device and a method of manufacturing the same'20107,569,476'Semiconductor integrated circuit device and a method of manufacturing the same'20097,095,120'Semiconductor integrated circuit device with a connective portion for multilevel interconnection'20067,088,001'Semiconductor integrated circuit device with a metallization structure'20067,018,919'Method of manufacturing a semiconductor integrated circuit device including a hole formed in an insulating film and a first conductive film formed over a bottom region and sidewalls of the hole'20066,838,772'Semiconductor device'20056,764,945'Method of manufacturing a multilayer metallization structure with non-directional sputtering method'20046,696,357'Method for manufacturing semiconductor integrated circuit devices using a conductive layer to prevent peeling between a bonding pad and an underlying insulating film'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2009Patents assigned to RENESAS TECH CORP (6)· patent assignee history
2004–2006Patents assigned to HITACHI ULSI SYS CO LTD (2)· patent assignee history
2004–2010Based in Ome, JP· patent location history
2011Based in Hachioji, JP· patent location history
2015–2020Patents assigned to HITACHI INT ELECTRIC INC (32)· patent assignee history
2015Patents assigned to ABURATANI YUKINORI (1)· patent assignee history
2015–2020Based in Toyama, JP· patent location history
2019–2020Patents assigned to KOKUSAI ELECTRIC CORP (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI INT ELECTRIC INC322015–2020
RENESAS TECH CORP62004–2009
KOKUSAI ELECTRIC CORP52019–2020
HITACHI ULSI SYS CO LTD22004–2006
ABURATANI YUKINORI12015
Locations
LocationPatentsSpan
Toyama, JP332015–2020
Ome, JP82004–2010
Hachioji, JP12011