Inventor

HSIANG-KU SHEN

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 55 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices27%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%

H10DInorganic electric semiconductor devices21%

H10BElectronic memory devices11%

H10NElectric solid-state devices not otherwise provided for7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

G11CStatic stores3%

H01FMagnets1%

PatentTitleYear

12,593,712Method of forming opening in passivation layer and structures thereof2026 12,581,987Redistribution layers and methods of fabricating the same in semiconductor devices2026 12,575,118Semiconductor device and manufacturing method thereof2026 12,477,756Metal-insulator-metal structure and methods of fabrication thereof2025 12,444,674Back-end-of-line passive device structure2025 12,432,933Semiconductor packages2025 12,389,612Method of forming a stress reduction structure for metal-insulator-metal capacitors2025 12,387,772Structure and method for MRAM devices with a slot via2025 12,356,633Semiconductor devices and method of forming the same2025 12,327,785High voltage passive device structure2025 12,300,640Semiconductor device and method of manufacturing thereof2025 12,266,681Capacitor device with multi-layer dielectric structure2025 12,243,909Multilayer capacitor electrode2025 12,230,566Metal-insulator-metal structure2025 12,218,186Back-end-of-line passive device structure having common connection to ground2025 12,211,845Semiconductor device and a method for fabricating the same2025 12,201,031Structure and method for MRAM devices having spacer element2025 12,191,248Semiconductor arrangement and method of making2025 12,193,336Structure and method for integrating MRAM and logic devices2025 12,107,041Metal plate corner structure on metal insulator metal2024 12,080,753Device structure with a redistribution layer and a buffer layer2024 12,057,445Method of manufacturing a semiconductor device and a semiconductor device2024 12,027,574Resistor structure2024 11,996,356Low-stress passivation layer2024 11,990,401Back-end-of-line passive device structure2024 11,967,573Redistribution layers and methods of fabricating the same in semiconductor devices2024 11,961,880Metal-insulator-metal structure2024 11,955,547Semiconductor device including an epitaxy region2024 11,950,432Semiconductor packages and method of manufacturing the same2024 11,937,515MRAM structure for balanced loading2024 11,935,787Semiconductor device and a method for fabricating the same2024 11,923,405Metal-insulator-metal structure and methods of fabrication thereof2024 11,855,132Multilayer capacitor electrode2023 11,842,959Metal-Insulator-Metal structure2023 11,791,371Resistor structure2023 11,778,918Magnetic memory cell with low-resistive electrode via and method of forming same2023 11,744,084Semiconductor devices and method of forming the same2023 11,728,295Semiconductor device and method of manufacturing thereof2023 11,728,262Metal plate corner structure on metal insulator metal2023 11,715,756Device structure and methods of forming the same2023 11,716,910MRAM structure for balanced loading2023 11,688,759Metal-insulator-metal capacitive structure and methods of fabricating thereof2023 11,670,573Low-stress passivation layer2023 11,659,774Structure and method for MRAM devices having spacer element2023 11,659,771Structure and method for integrating MRAM and logic devices2023 11,581,276Redistribution layers and methods of fabricating the same in semiconductor devices2023 11,532,695Stress reduction structure for metal-insulator-metal capacitors2022 11,521,970Semiconductor device and a method for fabricating the same2022 11,443,984Semiconductor device and a method for fabricating the same2022 11,444,173Semiconductor device structure with salicide layer and method for forming the same2022 11,424,319Multilayer capacitor electrode2022 11,342,408Metal-insulator-metal structure and methods of fabrication thereof2022 11,239,142Package structure and method for forming the same2022 11,222,946Semiconductor device including a high density MIM capacitor and method2022 11,145,592Process for forming metal-insulator-metal structures2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (55)· patent assignee history

2021–2026Based in TW· patent location history

2025Patents assigned to TAIWAN SEMICONDUCTOE MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	55	2021–2026
TAIWAN SEMICONDUCTOE MFG COMPANY LTD	1	2025

Locations

Location	Patents	Span
TW	55	2021–2026