Inventor

Mark D. Jaffe

Inventor

Shelburne, VT, US

Overview

1998–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 156 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%

H10DInorganic electric semiconductor devices14%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation13%

H01LSemiconductor devices13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

G06FElectric digital data processing5%

H03HImpedance networks, e.g. resonant circuits4%

Y10TTechnical subjects covered by former us classification4%

G02BOptical elements, systems or apparatus3%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%

PatentTitleYear

10,964,840Photodiode structures2021 10,896,992Photodiode structures2021 10,790,190Backside contact to a final substrate2020 10,712,498Shielding structures between optical waveguides2020 10,692,753Semiconductor structure with airgap2020 10,629,482Backside contact to a final substrate2020 10,622,506Photodiode structures2020 10,615,302Photodiode structures2020 10,573,554Backside contact to a final substrate2020 10,566,235Backside contact to a final substrate2020 10,559,743Backside integration of RF filters for RF front end modules and design structure2020 10,453,987Photodiode structures2019 10,424,686Photodiode structures2019 10,361,123Backside contact to a final substrate2019 10,277,188Switchable filters and design structures2019 10,224,280Backside device contact2019 10,211,146Air gap over transistor gate and related method2019 10,211,087Semiconductor structure with airgap2019 10,191,213Shielding structures between optical waveguides2019 10,170,418Backside device contact2019 10,164,597Switchable filters and design structures2018 10,164,101Transistor with improved channel mobility2018 10,164,596Switchable filters and design structures2018 10,157,838Backside device contact2018 10,157,777Air gap over transistor gate and related method2018 10,141,472Photodiode structures2018 10,079,248Field-effect transistors with a buried body contact2018 10,074,561Backside contact to a final substrate2018 10,050,171Photodiode structures2018 10,037,911Device layer transfer with a preserved handle wafer section2018 10,020,789Switchable filters and design structures2018 9,978,849SOI-MOSFET gate insulation layer with different thickness2018 9,935,600Switchable filters and design structures2018 9,917,005'Semiconductor structure with airgap'2018 9,887,156'Backside device contact'2018 9,852,944Backside contact to a final substrate2017 9,843,303'Switchable filters and design structures'2017 9,818,637'Device layer transfer with a preserved handle wafer section'2017 9,786,835'Backside integration of RF filters for RF front end modules and design structure'2017 9,740,080'Waveguide switch with tuned photonic microring'2017 9,728,838'On chip antenna with opening'2017 9,673,220'Chip structures with distributed wiring'2017 9,666,475'Semiconductor structure with airgap'2017 9,633,894'Semiconductor structure with airgap'2017 9,627,575'Photodiode structures'2017 9,543,356'Pixel sensor cell including light shield'2017 9,514,987'Backside contact to final substrate'2016 9,455,187'Backside device contact'2016 9,385,022'Silicon waveguide on bulk silicon substrate and methods of forming'2016 9,349,793'Semiconductor structure with airgap'2016 9,300,272'Tunable filter structures and design structures'2016 9,252,733'Switchable filters and design structures'2016 9,225,311'Method of manufacturing switchable filters'2015 9,214,561'Thin body switch transistor'2015 9,171,971'Encapsulated sensors'2015 9,165,819'High linearity SOI wafer for low-distortion circuit applications'2015 9,099,982'Method of manufacturing switching filters and design structures'2015 9,058,455'Backside integration of RF filters for RF front end modules and design structure'2015 9,054,671'Tunable filter structures and design structures'2015 9,048,809'Method of manufacturing switchable filters'2015 9,002,156'Vertically curved waveguide'2015 8,987,067'Segmented guard ring structures with electrically insulated gap structures and design structures thereof'2015 8,963,293'High resistivity silicon-on-insulator substrate and method of forming'2015 8,951,896'High linearity SOI wafer for low-distortion circuit applications'2015 8,910,355'Method of manufacturing a film bulk acoustic resonator with a loading element'2014 8,903,210'Vertical bend waveguide coupler for photonics applications'2014 8,828,746'Compensation for a charge in a silicon substrate'2014 8,796,130'Diffusion barrier for oppositely doped portions of gate conductor'2014 8,796,057'Isolation structures for global shutter imager pixel, methods of manufacture and design structures'2014 8,741,739'High resistivity silicon-on-insulator substrate and method of forming'2014 8,729,664'Discontinuous guard ring'2014 8,723,392'Saw filter having planar barrier layer and method of making'2014 8,689,152'Double-sided integrated circuit chips'2014 8,681,254'Methods for enhancing quality of pixel sensor image frames for global shutter imaging'2014 8,618,588'Anti-blooming pixel sensor cell with active neutral density filter, methods of manufacture, and design structure'2013 8,536,035'Silicon-on-insulator substrate and method of forming'2013 8,507,962'Isolation structures for global shutter imager pixel, methods of manufacture and design structures'2013 8,492,272'Passivated through wafer vias in low-doped semiconductor substrates'2013 8,471,306'Double-sided integrated circuit chips'2013 8,440,490'CMOS imager photodiode with enhanced capacitance'2013 8,421,126'Double-sided integrated circuit chips'2013 8,409,899'Delamination and crack resistant image sensor structures and methods'2013 8,384,690'Interface device with integrated solar cell(S) for power collection'2013 8,233,070'Variable dynamic range pixel sensor cell, design structure and method'2012 8,232,651'Bond pad for wafer and package for CMOS imager'2012 8,232,190'Three dimensional vertical E-fuse structures and methods of manufacturing the same'2012 8,168,474'Self-dicing chips using through silicon vias'2012 8,158,453'Methods of forming silicide strapping in imager transfer gate device'2012 8,138,531'Structures, design structures and methods of fabricating global shutter pixel sensor cells'2012 8,119,456'Bond pad for wafer and package for CMOS imager'2012 8,106,432'CMOS imager photodiode with enhanced capacitance'2012 8,077,240'Methods for enhancing quality of pixel sensor image frames for global shutter imaging'2011 8,039,875'Structure for pixel sensor cell that collects electrons and holes'2011 8,034,699'Isolation with offset deep well implants'2011 8,023,021'High efficiency CMOS image sensor pixel employing dynamic voltage supply'2011 8,013,342'Double-sided integrated circuit chips'2011 8,015,514'Random personalization of chips during fabrication'2011 8,004,289'Wafer-to-wafer alignments'2011 7,989,312'Double-sided integrated circuit chips'2011 7,977,711'Pixel sensor cell for collecting electrons and holes'2011 7,964,967'High surface area aluminum bond pad for through-wafer connections to an electronic package'2011 7,960,245'Dual wired integrated circuit chips'2011 7,939,914'Dual wired integrated circuit chips'2011 7,928,527'Delamination and crack resistant image sensor structures and methods'2011 7,915,056'Image sensor monitor structure in scribe area'2011 7,863,734'Dual-sided chip attached modules'2011 7,825,416'Image sensor including spatially different active and dark pixel interconnect patterns'2010 7,824,961'Stacked imager package'2010 7,821,553'Pixel array, imaging sensor including the pixel array and digital camera including the imaging sensor'2010 7,781,781'CMOS imager array with recessed dielectric'2010 7,772,028'CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom'2010 7,732,841'Pixel sensor cell for collecting electrons and holes'2010 7,719,118'Semiconductor chip scale package incorporating through-vias electrically connected to a substrate and other vias that are isolated from the substrate, and method of forming the package'2010 7,675,097'Silicide strapping in imager transfer gate device'2010 7,670,927'Double-sided integrated circuit chips'2010 7,659,564'CMOS imager photodiode with enhanced capacitance'2010 7,655,966'High efficiency CMOS image sensor pixel employing dynamic voltage supply'2010 7,655,495'Damascene copper wiring optical image sensor'2010 7,633,042'Pixel sensor cell having a pinning layer surrounding collection well regions for collecting electrons and holes'2009 7,633,106'Light shield for CMOS imager'2009 7,622,364'Bond pad for wafer and package for CMOS imager'2009 7,586,139'Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor'2009 7,572,701'Recessed gate for a CMOS image sensor'2009 7,563,636'Method of forming a pixel sensor cell for collecting electrons and holes'2009 7,538,373'Body potential imager cell'2009 7,537,951'Image sensor including spatially different active and dark pixel interconnect patterns'2009 7,531,392'Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same'2009 7,528,427'Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential'2009 7,521,798'Stacked imager package'2009 7,517,806'Integrated circuit having pairs of parallel complementary FinFETs'2009 7,491,992'Image sensor cells'2009 7,492,048'CMOS sensors having charge pushing regions'2009 7,491,561'Pixel sensor having doped isolation structure sidewall'2009 7,462,509'Dual-sided chip attached modules'2008 7,459,360'Method of forming pixel sensor cell having reduced pinning layer barrier potential'2008 7,439,561'Pixel sensor cell for collecting electrons and holes'2008 7,381,627'Dual wired integrated circuit chips'2008 7,361,989'Stacked imager package'2008 7,361,581'High surface area aluminum bond pad for through-wafer connections to an electronic package'2008 7,342,268'CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom'2008 7,285,477'Dual wired integrated circuit chips'2007 7,276,748'Body potential imager cell'2007 7,217,968'Recessed gate for an image sensor'2007 7,205,591'Pixel sensor cell having reduced pinning layer barrier potential and method thereof'2007 7,205,627'Image sensor cells'2007 7,193,289'Damascene copper wiring image sensor'2007 7,194,706'Designing scan chains with specific parameter sensitivities to identify process defects'2007 7,193,423'Wafer-to-wafer alignments'2007 7,141,836'Pixel sensor having doped isolation structure sidewall'2006 7,132,339'Transistor structure with thick recessed source/drain structures and fabrication process of same'2006 7,098,067'Masked sidewall implant for image sensor'2006 6,943,405'Integrated circuit having pairs of parallel complementary FinFETs'2005 6,870,225'Transistor structure with thick recessed source/drain structures and fabrication process of same'2005 6,394,638'Trench isolation for active areas and first level conductors'2002 6,063,687'Formation of trench isolation for active areas and first level conductors'2000 5,734,192'Trench isolation for active areas and first level conductors'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2021Patents assigned to IBM (140)· patent assignee history

1998–2002Based in Colchester, VT, US· patent location history

2005–2021Based in Shelburne, VT, US· patent location history

2011–2017Patents assigned to JAFFE MARK D (27)· patent assignee history

2012–2017Patents assigned to GAMBINO JEFFREY P (15)· patent assignee history

2012–2015Patents assigned to ADKISSON JAMES W (14)· patent assignee history

2015–2020Patents assigned to GLOBALFOUNDRIES INC (19)· patent assignee history

2017–2018Based in Essex Junction, VT, US· patent location history

2017Based in Shelbourne, VT, US· patent location history

2017Based in Selburne, VT, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	140	1998–2021
JAFFE MARK Dself	27	2011–2017
GLOBALFOUNDRIES INC	19	2015–2020
GAMBINO JEFFREY P	15	2012–2017
ADKISSON JAMES W	14	2012–2015

Locations

Location	Patents	Span
Shelburne, VT, US	145	2005–2021
Essex Junction, VT, US	3	2017–2018
Colchester, VT, US	3	1998–2002
Shelbourne, VT, US	2	2017
Selburne, VT, US	1	2017