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Inventor

Yasuo Itoh

Inventor
Kawasaki, JP

Overview

75→
Patents
1976–2017
Patent span
Physics
Primary field (CPC G)

Patents· 75 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores44%
G06FElectric digital data processing9%
H10BElectronic memory devices9%
H04SStereophonic systems5%
B22DCasting of metals4%
H03DDemodulation or transference of modulation from one carrier to another4%
G11BInformation storage based on relative movement between record carrier and transducer3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
G05FSystems for regulating electric or magnetic variables2%
H03GControl of amplification2%
PatentTitleYear
9,568,599'Radar signal processing device, radar apparatus, and method of processing radar signal'20177,139,201'Non-volatile semiconductor memory device and memory system using the same'20066,967,892'Non-volatile semiconductor memory device and memory system using the same'20056,853,600'Ferro-electric random access memory using paraelectric and ferroelectric capacitor for generating a reference potential'20056,781,895'Non-volatile semiconductor memory device and memory system using the same'20046,493,267'Nonvolatile semiconductor memory device having verify function'20026,404,274'Internal voltage generating circuit capable of generating variable multi-level voltages'20026,259,612'Semiconductor device'20016,240,018'Nonvolatile semiconductor memory device having verify function'20016,172,911'Non-volatile semiconductor memory device with an improved verify voltage generator'20016,107,658'Non-volatile semiconductor memory device'20006,081,454'Electrically erasable programmable read-only memory with threshold value controller for data programming'20006,061,289'Variable potential generating circuit using current-scaling adding type D/A converter circuit in semiconductor memory device'20006,049,494'Semiconductor memory device'20006,023,424'Nonvolatile semiconductor memory device having verify function'20006,016,274'Semiconductor memory device'20006,011,287'Non-volatile semiconductor memory device'20006,002,354'Variable potential generating circuit using current-scaling adding type D/A converter circuit'19995,990,977'Picture switching apparatus for executing a fade-out/fade-in processing'19995,978,265'Non-volatile semiconductor memory device with nand type memory cell arrays'19995,909,399'Non-volatile semiconductor memory device and memory system using the same'19995,898,335'High voltage generator circuit'19995,880,994'Non-volatile semiconductor memory device having verify function'19995,831,903'Electrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the same'19985,818,791'Non-volatile semiconductor memory device and memory system using the same'19985,793,696'Non-volatile semiconductor memory device and memory system using the same'19985,784,315'Semiconductor memory device'1998RE035838'Electrically erasable programmable read-only memory with NAND cell structure'19985,751,634'Non-volatile semiconductor memory device for storing multivalue data and readout/write-in method therefor'19985,726,882'Non-volatile semiconductor memory device with verify mode for verifying data written to memory cells'19985,724,300'Non-volatile semiconductor memory device and memory system using the same'19985,657,270'Electrically erasable programmable read-only memory with threshold value controller for data programming'19975,642,072'High voltage generator circuit'19975,615,165'Non-volatile semiconductor memory device and memory system using the same'19975,557,568'Non-volatile semiconductor memory device with verify mode for verifying data written to memory cells'19965,546,351'Non-volatile semiconductor memory device and memory system using the same'19965,508,957'Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through'19965,452,249'Non-volatile semiconductor memory device with verify mode for verifying data written to memory cells'19955,440,509'Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines'19955,426,516'Color image processing apparatus'19955,400,279'Nonvolatile semiconductor memory device with NAND cell structure'19955,388,084'Non-volatile semiconductor memory device with high voltage generator'19955,368,088'Apparatus of continuously casting a metal sheet'19945,361,227'Non-volatile semiconductor memory device and memory system using the same'19945,327,395'Page-mode type memory writing control circuit using end-of-page address'19945,278,794'NAND-cell type electrically erasable and programmable read-only memory with redundancy circuit'19945,268,867'Semiconductor memory device'19935,247,480'Electrically erasable progammable read-only memory with nand cell blocks'19935,179,427'Non-volatile semiconductor memory device with voltage stabilizing electrode'19935,103,895'Method and apparatus of continuously casting a metal sheet'19925,075,890'Electrically erasable programmable read-only memory with NAND cell'19915,050,125'Electrically erasable programmable read-only memory with NAND cellstructure'19915,043,942'Nand cell type programmable read-only memory with common control gate driver circuit'19914,959,812'Electrically erasable programmable read-only memory with NAND cell structure'19904,939,690'Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation'1990D0305721'Electric finishing sander'19904,887,662'Cooling drum for continuous-casting machines for manufacturing thin metallic strip'19894,800,530'Semiconductor memory system with dynamic random access memory cells'19894,799,193'Semiconductor memory devices'19894,748,596'Semiconductor memory device with sense amplifiers'19884,719,618'Digital conference circuit'19884,638,458'Semiconductor memory address lines with varied interval contact holes'19874,591,670'Echo canceller and echo suppressor for frequency divisional attenuation of acoustic echoes'19864,266,244'System for detecting the initial point of a digital signal in a composite digital signal reproducing system'19814,107,478'Angle modulated wave demodulation system'19784,099,029'Asynchronous PCM common decoding apparatus'19784,079,330'System for demodulating angle-modulated signals'19784,030,533'Continuous casting system'19773,991,283'Multichannel record disc reproducing system'19763,987,841'Continuous casting system'19763,983,500'Angle modulated wave demodulation system'19763,983,334'Matrix and equalizer circuit with gain control'19763,944,755'Composite filter circuit'19763,940,698'Muting circuit'19763,934,087'Angle modulated wave demodulation system'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1999Patents assigned to VICTOR COMPANY OF JAPAN (11)· patent assignee history
1976–1994Patents assigned to NIPPON STEEL CORP (4)· patent assignee history
1976–1988Based in Tokyo, JP· patent location history
1976–1977Based in Kisarazu, JP· patent location history
1986–1988Patents assigned to NEC CORP (2)· patent assignee history
1987–2006Patents assigned to TOSHIBA KK (53)· patent assignee history
1987–2005Based in Yokohama, JP· patent location history
1989–2006Based in Kawasaki, JP· patent location history
1992–1994Patents assigned to MITSUBISHI HEAVY IND LTD (2)· patent assignee history
1992–1994Based in Kitakyushu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK531987–2006
VICTOR COMPANY OF JAPAN111976–1999
NIPPON STEEL CORP41976–1994
MITSUBISHI HEAVY IND LTD21992–1994
NEC CORP21986–1988
Locations
LocationPatentsSpan
Kawasaki, JP501989–2006
Tokyo, JP121976–1988
Yokohama, JP51987–2005
Kitakyushu, JP21992–1994
Kisarazu, JP21976–1977