Inventor
Ajith Varghese
Inventor
McKinney, TX, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices44%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H01LSemiconductor devices9%
Y02PClimate change mitigation technologies in the production or processing of goods3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
9,054,056'Transistor performance using a two-step damage anneal'20159,029,251'Transistor performance using a two-step damage anneal'20158,828,855'Transistor performance using a two-step damage anneal'20148,119,470'Mitigation of gate to contact capacitance in CMOS flow'20127,855,111'Border region defect reduction in hybrid orientation technology (HOT) direct silicon bonded (DSB) substrates'20107,838,370'Highly selective liners for semiconductor fabrication'20107,723,173'Low temperature polysilicon oxide process for high-K dielectric/metal gate stack'20107,696,021'Semiconductor device manufactured using a non-contact implant metrology'20107,682,988'Thermal treatment of nitrided oxide to improve negative bias thermal instability'20107,514,308'CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers'20097,435,651'Method to obtain uniform nitrogen profile in gate dielectrics'20087,396,728'Methods of improving drive currents by employing strain inducing STI liners'20087,384,861'Strain modulation employing process techniques for CMOS technologies'20087,227,201'CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers'20076,924,239'Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike†radical oxidation'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2015Patents assigned to TEXAS INSTRUMENTS INC (15)· patent assignee history
2005–2015Based in McKinney, TX, US· patent location history
2010Based in Austin, TX, US· patent location history
2012–2014Patents assigned to VARGHESE AJITH (2)· patent assignee history
2012Patents assigned to EKBOTE SHASHANK SURESHCHANDRA (1)· patent assignee history
2012Patents assigned to HALL LINDSEY (1)· patent assignee history
2012Patents assigned to HUFFMAN CRAIG (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 15 | 2005–2015 |
| VARGHESE AJITHself | 2 | 2012–2014 |
| EKBOTE SHASHANK SURESHCHANDRA | 1 | 2012 |
| HALL LINDSEY | 1 | 2012 |
| HUFFMAN CRAIG | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| McKinney, Texas, US | 13 | 2005–2015 |
| Austin, Texas, US | 2 | 2010 |