Inventor
WEIPING BAI
Inventor
CN
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices39%
H10DInorganic electric semiconductor devices20%
H01LSemiconductor devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G11CStatic stores7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B82YSpecific uses or applications of nanostructures2%
H01GCapacitors2%
H10KOrganic electric solid-state devices2%
PatentTitleYear
12,598,736Semiconductor structure and manufacturing method thereof202612,557,272Semiconductor structure and method for manufacturing same202612,550,312Three-dimensional memory and formation method thereof202612,513,893Semiconductor structure and method for fabricating same202512,490,420Semiconductor structure and manufacturing method therefor, and memory202512,469,697Preparation method for capacitor structure, capacitor structure, and memory202512,446,213Method for forming semiconductor device and semiconductor device202512,446,206Three-dimensional semiconductor structure and formation method thereof202512,426,251Semiconductor structure, method for manufacturing semiconductor structure, and memory202512,419,041Method for forming storage node contact structure and semiconductor structure202512,396,182Capacitor and manufacturing method thereof, and semiconductor device202512,389,589Semiconductor device and method for manufacturing semiconductor device202512,369,297Semiconductor structure and manufacturing method thereof202512,356,605Memory device and manufacturing method therefor202512,342,523Method for manufacturing memory and memory202512,342,529Semiconductor structure and manufacturing method thereof and memory202512,336,169Semiconductor structure and manufacturing method thereof202512,324,141Memory and method for forming same202512,309,997Semiconductor structure and method for fabricating same202512,225,707Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory202512,211,889Electrode layer, capacitor and methods for electrode layer and capacitor manufacture202512,127,415Manufacturing method for capacitor structure, capacitor structure and memory202412,033,799Capacitor structure and manufacturing method thereof202411,871,562Method for forming storage node contact structure and semiconductor structure2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2026Patents assigned to CHANGXIN MEMORY TECH INC (24)· patent assignee history
2024–2026Based in CN· patent location history
2025–2026Patents assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHANGXIN MEMORY TECH INC | 24 | 2024–2026 |
| BEIJING SUPERSTRING ACADEMY OF MEMORY TECH | 5 | 2025–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 24 | 2024–2026 |