Inventor

Cheng-Hsien Wu

Inventor

Hsinchu, TW

Overview

2012–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 108 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices31%

H01LSemiconductor devices27%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%

B82YSpecific uses or applications of nanostructures3%

B29CShaping or joining of plastics1%

C12NMicroorganisms or enzymes1%

C12PFermentation or enzyme-using processes to synthesise a desired chemical compound or composition or to separate optical isomers from a racemic mixture1%

G02BOptical elements, systems or apparatus1%

C30BSingle-crystal growth0%

PatentTitleYear

11,128,130Protection circuit with bidirectional surge protection2021 10,879,065III-V compound semiconductors in isolation regions and method forming same2020 10,879,080Methods for forming polycrystalline channel on dielectric films with controlled grain boundaries2020 10,797,162FinFET device having a channel defined in a diamond-like shape semiconductor structure2020 10,770,592Multi-gate semiconductor device and method for forming the same2020 10,727,351Semiconductor structures and methods with high mobility and high energy bandgap materials2020 10,727,344Method of manufacturing a semiconductor device with multilayered channel structure2020 10,700,206Semiconductor device and manufacturing method thereof2020 10,665,674FinFET semiconductor device with germanium diffusion over silicon fins2020 10,622,261FinFET devices with unique shape and the fabrication thereof2020 10,522,625Multi-gate device and method of fabrication thereof2019 10,522,345Lattice-mismatched semiconductor substrates with defect reduction2019 10,522,694Methods of manufacturing semiconductor device2019 10,516,056Semiconductor device and manufacturing method thereof2019 10,516,032Method of manufacturing a semiconductor device2019 10,510,754Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same2019 10,504,993FinFET semiconductor device with germanium diffusion over silicon fins2019 10,504,796Semiconductor device and method for manufacturing the same2019 10,431,696Structure and formation method of semiconductor device structure with nanowire2019 10,355,133Method for forming a semiconductor device including a stacked wire structure2019 10,326,021Source/drain profile for FinFeT2019 10,304,826Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same2019 10,283,414Isolation manufacturing method for semiconductor structures2019 10,269,969Semiconductor structures and methods with high mobility and high energy bandgap materials2019 10,269,965Multi-gate semiconductor device and method for forming the same2019 10,269,934Method for manufacturing tunnel field effect transistor2019 10,263,091Multiple gate field effect transistors having oxygen-scavenged gate stack2019 10,263,097Method of semiconductor arrangement formation2019 10,170,375FinFET devices with unique fin shape and the fabrication thereof2019 10,170,374Semiconductor device and method for manufacturing the same2019 10,164,023FinFETs with strained well regions2018 10,163,628Lattice-mismatched semiconductor substrates with defect reduction2018 10,164,062FinFET device having a channel defined in a diamond-like shape semiconductor structure2018 10,158,015FinFETs with strained well regions2018 10,147,819Semiconductor device and manufacturing method thereof2018 10,134,843Multi-gate device and method of fabrication thereof2018 10,115,826Semiconductor structure and the manufacturing method thereof2018 10,096,710Method of forming strained structures of semiconductor devices2018 10,084,069Apparatus and method for FinFETs2018 10,062,782Method of manufacturing a semiconductor device with multilayered channel structure2018 10,026,641Isolation structure of semiconductor device2018 10,002,969Semiconductor device and manufacturing method thereof2018 9,985,131Source/drain profile for FinFET2018 9,922,828'Apparatus and method for FinFETs'2018 9,873,900RNA-mediated gene assembly from DNA oligonucleotides2018 9,870,920'Growing III-V compound semiconductors from trenches filled with intermediate layers'2018 9,859,380'FinFETs with strained well regions'2018 9,786,543'Isolation structure of semiconductor device'2017 9,780,174'Methods for forming semiconductor regions in trenches'2017 9,773,889'Method of semiconductor arrangement formation'2017 9,748,143'FinFETs with strained well regions'2017 9,748,388'Method of forming strained structures of semiconductor devices'2017 9,735,274'Semiconductor device including a stacked wire structure'2017 9,722,051'Apparatus and method for FinFETs'2017 9,677,067'Compositions and methods for synthetic gene assembly'2017 9,660,033'Multi-gate device and method of fabrication thereof'2017 9,659,780'Multiple gate field-effect transistors having oxygen-scavenged gate stack'2017 9,627,540'Semiconductor device and manufacturing method thereof'2017 9,601,342'FinFETs with strained well regions'2017 9,601,594'Semiconductor device with enhanced strain'2017 9,595,614'Semiconductor structures and methods with high mobility and high energy bandgap materials'2017 9,583,379'Inverted trapezoidal recess for epitaxial growth'2017 9,583,399'Semiconductor device and manufacturing method thereof'2017 9,564,489'Multiple gate field-effect transistors having oxygen-scavenged gate stack'2017 9,559,099'Apparatus and method for FinFETs'2017 9,553,012'Semiconductor structure and the manufacturing method thereof'2017 9,553,149'Semiconductor device with a strained region and method of making'2017 9,548,303'FinFET devices with unique fin shape and the fabrication thereof'2017 9,530,776'FinFET semiconductor device with germanium diffusion over silicon fins'2016 9,502,539'FINFET device having a channel defined in a diamond-like shape semiconductor structure'2016 9,455,320'FinFETs with strained well regions'2016 9,450,098'FinFET having superlattice stressor'2016 9,390,982'CMOS devices with reduced leakage and methods of forming the same'2016 9,337,304'Method of making semiconductor device'2016 9,279,932'LGF roll-to-roll manufacturing method and structure thereof'2016 9,276,117'Structure and method and FinFET device'2016 9,246,004'Strained structures of semiconductor devices'2016 9,233,496'Adjustment mechanism of mold system having electrically adjusting and positioning functions'2016 9,224,734'CMOS devices with reduced leakage and methods of forming the same'2015 9,209,066'Isolation structure of semiconductor device'2015 9,209,023'Growing III-V compound semiconductors from trenches filled with intermediate layers'2015 9,196,709'Methods for forming semiconductor regions in trenches'2015 9,184,050'Inverted trapezoidal recess for epitaxial growth'2015 9,159,824'FinFETs with strained well regions'2015 9,153,582'Apparatus and method for FinFETs'2015 9,123,633'Methods for forming semiconductor regions in trenches'2015 9,105,654'Source/drain profile for FinFET'2015 9,087,902'FinFETs with strained well regions'2015 9,076,819'Contact structure of semiconductor device'2015 8,994,002'FinFET having superlattice stressor'2015 8,969,156'Semiconductor structures and methods with high mobility and high energy bandgap materials'2015 8,878,302'Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer'2014 8,841,701'FinFET device having a channel defined in a diamond-like shape semiconductor structure'2014 8,836,016'Semiconductor structures and methods with high mobility and high energy bandgap materials'2014 8,815,712'Method for epitaxial re-growth of semiconductor region'2014 8,786,019'CMOS FinFET device'2014 8,759,203'Growing III-V compound semiconductors from trenches filled with intermediate layers'2014 8,742,509'Apparatus and method for FinFETs'2014 8,721,148'LGF plate-to-plate manufacturing method and structure thereof'2014 8,716,765'Contact structure of semiconductor device'2014 8,629,012'Method for forming antimony-based FETs monolithically'2014 8,618,556'FinFET design and method of fabricating same'2013 8,609,517'MOCVD for growing III-V compound semiconductors on silicon substrates'2013 8,486,770'Method of forming CMOS FinFET device'2013 8,426,890'Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces'2013 8,253,167'Method for forming antimony-based FETs monolithically'2012 8,242,540'Epitaxial growth of III-V compound semiconductors on silicon surfaces'2012 8,183,134'Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (33)· patent assignee history

2012–2017Patents assigned to WU CHENG-HSIEN (22)· patent assignee history

2012–2017Patents assigned to KO CHIH-HSIN (19)· patent assignee history

2012–2017Patents assigned to WANN CLEMENT HSINGJEN (17)· patent assignee history

2012–2015Based in Taipei, TW· patent location history

2013–2020Based in Hsinchu, TW· patent location history

2014–2016Based in Kaohsiung, TW· patent location history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (69)· patent assignee history

2018Based in Madison, WI, US· patent location history

2021Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	69	2016–2020
TAIWAN SEMICONDUCTOR MFG	33	2012–2016
WU CHENG-HSIENself	22	2012–2017
KO CHIH-HSIN	19	2012–2017
WANN CLEMENT HSINGJEN	17	2012–2017

Locations

Location	Patents	Span
Hsinchu, TW	94	2013–2020
Taipei, TW	8	2012–2015
Kaohsiung, TW	3	2014–2016
Shanghai, CN	1	2021
Madison, WI, US	1	2018