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Inventor

Ching-Nan Hsiao

Inventor
Kaohsiung, TW

Overview

27→
Patents
2003–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices51%
H10DInorganic electric semiconductor devices47%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
8,330,198'Device for preventing current-leakage'20128,148,766'Nonvolatile memory cell'20128,105,900'Manufacturing method of non-volatile memory'20128,003,480'Process using oxide supporter for manufacturing a capacitor lower electrode of a micro stacked DRAM'20117,981,743'Method of fabricating a memory cell'20117,972,924'Method for manufacturing a memory'20117,868,377'Layout and structure of memory'20117,855,124'Method for forming a semiconductor device'20107,781,804'Non-volatile memory'20107,781,279'Method for manufacturing a memory'20107,714,445'Dynamic random access memory with an electrostatic discharge structure and method for manufacturing the same'20107,713,820'Method for manufacturing non-volatile memory'20107,700,991'Two bit memory structure and method of making the same'20107,682,902'Memory structure and method of making the same'20107,642,191'Method of forming semiconductor structure'20107,576,381'Memory structure and fabricating method thereof'20097,482,227'Method for manufacturing a flash memory'20097,476,929'Multi-bit stacked-type non-volatile memory'20097,135,731'Vertical DRAM and fabrication method thereof'20067,022,573'Stack gate with tip vertical memory and method for fabricating the same'20067,005,701'Method for fabricating a vertical NROM cell'20066,995,061'Multi-bit stacked-type non-volatile memory and manufacture method thereof'20066,916,715'Method for fabricating a vertical NROM cell'20056,870,216'Stack gate with tip vertical memory and method for fabricating the same'20056,808,987'Vertical nitride read-only memory cell and method for forming the same'20046,670,246'Method for forming a vertical nitride read-only memory'20036,653,188'Method of forming poly tip of floating gate in split-gate memory'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2012Patents assigned to NANYA TECHNOLOGY CORP (25)· patent assignee history
2003–2012Based in Kaohsiung, TW· patent location history
2009–2010Based in Taoyuan, TW· patent location history
2010Based in Taipei, TW· patent location history
2011–2012Patents assigned to INOTERA MEMORIES INC (2)· patent assignee history
2012Patents assigned to HSIAO CHING-NAN (3)· patent assignee history
2012Patents assigned to HUANG CHUNG-LIN (3)· patent assignee history
2012Patents assigned to HUANG SHIN BIN (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NANYA TECHNOLOGY CORP252003–2012
HSIAO CHING-NANself32012
HUANG CHUNG-LIN32012
INOTERA MEMORIES INC22011–2012
HUANG SHIN BIN12012
Locations
LocationPatentsSpan
Kaohsiung, TW242003–2012
Taoyuan, TW22009–2010
Taipei, TW12010