Inventor
William J. Gallagher
Inventor
Ardsley, NY, US
Overview
Patents· 69 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores13%
H01FMagnets11%
H10NElectric solid-state devices not otherwise provided for11%
H01LSemiconductor devices11%
H10DInorganic electric semiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10BElectronic memory devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
B82YSpecific uses or applications of nanostructures4%
PatentTitleYear
11,107,878High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors202111,081,153Magnetic memory device with balancing synthetic anti-ferromagnetic layer202111,075,336Magnetic random access memory and manufacturing method thereof202111,031,544Memory device with superparamagnetic layer202111,000,941Reciprocating saw202110,784,045Laminated magnetic materials for on-chip magnetic inductors/transformers202010,763,038Laminated magnetic materials for on-chip magnetic inductors/transformers202010,541,361Magnetic random access memory and manufacturing method thereof202010,276,227Write algorithm for memory to reduce failure rate of write operations201910,217,641Control of current collapse in thin patterned GaN201910,043,607Electrolessly formed high resistivity magnetic materials201810,002,919High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors20189,911,602'Embedded gallium-nitride in silicon'20189,865,673'High resistivity soft magnetic material for miniaturized power converter'20189,793,336'High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors'20179,767,878'Semiconductor memory device and method for controlling the same'20179,761,368'Laminated structures for power efficient on-chip magnetic inductors'20179,734,883'Reference circuit and MRAM'20179,697,943'Laminating magnetic cores for on-chip magnetic devices'20179,691,425'Laminating magnetic cores for on-chip magnetic devices'20179,685,329'Embedded gallium-nitride in silicon'20179,660,069'Group III nitride integration with CMOS technology'20179,653,532'High resistivity soft magnetic material for miniaturized power converter'20179,590,026'High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors'20179,564,526'Group III nitride integration with CMOS technology'20179,564,165'Laminating magnetic cores for on-chip magnetic devices'20179,495,989'Laminating magnetic cores for on-chip magnetic devices'20169,478,708'Embedded gallium—nitride in silicon'20169,437,668'High resistivity soft magnetic material for miniaturized power converter'20169,362,281'Group III nitride integration with CMOS technology'20169,331,076'Group III nitride integration with CMOS technology'20169,324,495'Planar inductors with closed magnetic loops'20169,321,634'Forming magnetic microelectromechanical inductive components'20169,230,624'Magnetic shift register memory device'20169,193,584'Forming magnetic microelectromechanical inductive components'20159,105,841'Forming magnetic microelectromechanical inductive components'20158,956,975'Electroless plated material formed directly on metal'20158,934,289'Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction'20158,923,039'Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction'20148,846,529'Electroless plating of cobalt alloys for on chip inductors'20148,755,220'Hybrid superconducting-magnetic memory cell and array'20148,717,136'Inductor with laminated yoke'20148,638,587'Magnetic shift register memory device'20148,547,732'Hybrid superconducting-magnetic memory cell and array'20138,537,588'Magnetic shift register memory device'20138,331,139'Increased magnetic damping for toggle MRAM'20128,228,706'Magnetic shift register memory device'20128,208,288'Hybrid superconducting-magnetic memory cell and array'20128,102,236'Thin film inductor with integrated gaps'20127,920,416'Increased magnetic damping for toggle MRAM'20117,506,236'Techniques for operating semiconductor devices'20097,505,308'Systems involving spin-transfer magnetic random access memory'20097,492,631'Methods involving resetting spin-torque magnetic random access memory'20096,590,750'Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices'20036,452,764'Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices'20026,392,156'High current conductors and high field magnets using anisotropic superconductors'20026,368,878'Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices'20026,226,160'Small area magnetic tunnel junction devices with low resistance and high magnetoresistance'20016,104,633'Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices'20006,072,718'Magnetic memory devices having multiple magnetic tunnel junctions therein'20005,991,193'Voltage biasing for magnetic ram with magnetic tunnel memory cells'19995,841,692'Magnetic tunnel junction device with antiferromagnetically coupled pinned layer'19985,650,958'Magnetic tunnel junctions with controlled magnetic response'19975,646,095'Selective insulation etching for fabricating superconductor microcircuits'19975,640,343'Magnetic memory array using magnetic tunnel junction devices in the memory cells'19975,183,970'Oriented superconductors for AC power transmission'19935,055,158'Planarization of Josephson integrated circuit'19914,962,086'High T.sub.c superconductor - gallate crystal structures'19904,831,421'Superconducting device'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2021Patents assigned to IBM (61)· patent assignee history
1989–2021Based in Ardsley, NY, US· patent location history
1993Based in Dobbs Ferry, NY, US· patent location history
2012–2014Patents assigned to GALLAGHER WILLIAM J (7)· patent assignee history
2012–2013Patents assigned to BULZACCHELLI JOHN F (2)· patent assignee history
2012–2014Patents assigned to FONTANA JR ROBERT E (2)· patent assignee history
2016–2017Based in Arsdely, NY, US· patent location history
2017–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2017–2021Based in Hsinchu, TW· patent location history
2021Based in Stewartstown, PA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 61 | 1989–2021 |
| GALLAGHER WILLIAM Jself | 7 | 2012–2014 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2017–2021 |
| BULZACCHELLI JOHN F | 2 | 2012–2013 |
| FONTANA JR ROBERT E | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ardsley, New York, US | 56 | 1989–2021 |
| Hsinchu, TW | 7 | 2017–2021 |
| Arsdely, New York, US | 4 | 2016–2017 |
| Stewartstown, Pennsylvania, US | 1 | 2021 |
| Dobbs Ferry, New York, US | 1 | 1993 |