Inventor
Haruka Shimizu
Inventor
Kodaira, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
C09KMaterials for miscellaneous applications, not provided for elsewhere5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
H03KPulse technique2%
PatentTitleYear
10,550,321Phosphor and use thereof202010,229,974Semiconductor device and power conversion device20199,543,395'Normally-off power JFET and manufacturing method thereof'20179,406,743'Semiconductor device with counter doped layer'20169,394,478'Phosphor, LED light-emission element, and light source device'20169,293,453'Electronic circuit device'20169,166,119'Light-emitting device'20159,048,264'Manufacturing method of semiconductor device and semiconductor device'20159,041,049'Power JFET'20158,890,169'Semiconductor device'20148,872,191'Electronic circuit device'20148,766,277'Semiconductor device and manufacturing method of the same'20148,564,060'Semiconductor device with large blocking voltage and manufacturing method thereof'20138,524,552'Normally-off power JFET and manufacturing method thereof'20138,436,397'Semiconductor device including normally-off type junction transistor and method of manufacturing the same'20138,390,001'Electronic circuit device'20138,049,223'Semiconductor device with large blocking voltage'20117,880,174'Circuit arrangement having a free-wheel diode'20117,772,613'Semiconductor device with large blocking voltage and method of manufacturing the same'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2017Based in Kodaira, JP· patent location history
2011–2017Patents assigned to RENESAS ELECTRONICS CORP (11)· patent assignee history
2011–2019Patents assigned to HITACHI LTD (4)· patent assignee history
2011Based in Kokubunji, JP· patent location history
2013–2015Patents assigned to SHIMIZU HARUKA (8)· patent assignee history
2013–2014Patents assigned to YOKOYAMA NATSUKI (6)· patent assignee history
2015–2020Patents assigned to MITSUI MINING & SMELTING CO (3)· patent assignee history
2015–2019Based in Tokyo, JP· patent location history
2015–2016Based in Ageo, JP· patent location history
2020Based in Shimonoseki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 11 | 2011–2017 |
| SHIMIZU HARUKAself | 8 | 2013–2015 |
| YOKOYAMA NATSUKI | 6 | 2013–2014 |
| HITACHI LTD | 4 | 2011–2019 |
| MITSUI MINING & SMELTING CO | 3 | 2015–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kodaira, JP | 11 | 2010–2017 |
| Tokyo, JP | 3 | 2015–2019 |
| Ageo, JP | 2 | 2015–2016 |
| Kokubunji, JP | 2 | 2011 |
| Shimonoseki, JP | 1 | 2020 |