Inventor
Kensuke Kasahara
Inventor
Tokyo, JP
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices64%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
7,863,648'Field effect transistor'20117,800,131'Field effect transistor'20107,071,526'Semiconductor device having Schottky junction electrode'20066,765,241'Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances'20046,552,373'Hetero-junction field effect transistor having an intermediate layer'20036,492,669'Semiconductor device with schottky electrode having high schottky barrier'20026,476,431'Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same'20026,465,814'Semiconductor device'20026,441,391'Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate'20026,440,822'Method of manufacturing semiconductor device with sidewall metal layers'20026,180,968'Compound semiconductor device and method of manufacturing the same'20016,093,657'Fabrication process of semiconductor device'20005,869,856'Field effect transistor'19994,837,605'Indium-phosphide hetero-MIS-gate field effect transistor'19894,829,346'Field-effect transistor and the same associated with an optical semiconductor device'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2011Patents assigned to NEC CORP (15)· patent assignee history
1989–2011Based in Tokyo, JP· patent location history
2004Based in Minato-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 15 | 1989–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 14 | 1989–2011 |
| Minato-ku, JP | 1 | 2004 |