Inventor
Fong-Yuan Chang
Inventor
Hsinchu, TW
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
G06FElectric digital data processing16%
H01LSemiconductor devices16%
H10DInorganic electric semiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems5%
B81BMicrostructural devices or systems, e.g. micromechanical devices3%
F25BRefrigeration machines, plants or systems3%
G01RMeasuring electric variables3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
11,132,488Method of modifying cell, system for modifying cell and global connection routing method202111,094,608Heat dissipation structure including stacked chips surrounded by thermal interface material rings202111,088,084Electromagnetic shielding metal-insulator-metal capacitor structure202111,081,4263D IC power grid202111,080,453Integrated circuit fin layout method, system, and structure202111,043,473Integrated circuit including a first semiconductor wafer and a second semiconductor wafer, semiconductor device including a first semiconductor wafer and a second semiconductor wafer and method of manufacturing same202111,037,920Pin modification for standard cells202111,030,372Method for generating layout diagram including cell having pin patterns and semiconductor device based on same202111,030,366Method and system of expanding set of standard cells which comprise a library20218,084,361'Semiconductor fabrication method suitable for MEMS'20117,732,299'Process for wafer bonding'20107,696,766'Ultra-fine pitch probe card structure'20106,679,064'Wafer transfer system with temperature control apparatus'20046,069,091'In-situ sequential silicon containing hard mask layer/silicon layer plasma etch method'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (5)· patent assignee history
2000–2011Based in Taipei, TW· patent location history
2011Patents assigned to CHANG FA-YUAN (1)· patent assignee history
2011Patents assigned to CHIEN YUAN-HAO (1)· patent assignee history
2011Patents assigned to HUANG TSUNG-CHENG (1)· patent assignee history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (9)· patent assignee history
2021Based in Hsinchu, TW· patent location history
2021Based in Hsin Chu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 9 | 2021 |
| TAIWAN SEMICONDUCTOR MFG | 5 | 2000–2011 |
| CHANG FA-YUANself | 1 | 2011 |
| CHIEN YUAN-HAO | 1 | 2011 |
| HUANG TSUNG-CHENG | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 8 | 2021 |
| Taipei, TW | 5 | 2000–2011 |
| Hsin Chu, TW | 1 | 2021 |