Inventor

Ying-Lan Chang

Inventor
Cupertino, CA, US

Overview

27→
Patents
2001–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures24%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light13%
G01NInvestigating or analysing materials by determining their chemical or physical properties10%
H10DInorganic electric semiconductor devices9%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
Y02ATechnologies for adaptation to climate change5%
C30BSingle-crystal growth4%
H01LSemiconductor devices4%
PatentTitleYear
9,570,651'Coalesced nanowire structures with interstitial voids and method for manufacturing the same'20179,357,946'Breath condensate sampler and detector and breath/breath condensate sampler and detector'20169,291,613'Sensor having a thin-film inhibition layer'20169,103,775'Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices'20159,035,278'Coalesced nanowire structures with interstitial voids and method for manufacturing the same'20158,993,346'Magnetic carbon nanotube based biodetection'20158,754,454'Sensor having a thin-film inhibition layer'20148,152,991'Ammonia nanosensors, and environmental control system'20128,154,093'Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices'20127,948,041'Sensor having a thin-film inhibition layer'20117,553,730'Methods of fabrication employing nanoscale mandrels'20097,269,196'Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof'20077,256,394'Target support and method'20077,123,638'Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant'20067,034,331'Material systems for semiconductor tunnel-junction structures'20067,033,938'Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region'20067,016,392'GaAs-based long-wavelength laser incorporating tunnel junction structure'20066,931,044'Method and apparatus for improving temperature performance for GaAsSb/GaAs devices'20056,878,959'Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice'20056,878,970'Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells'20056,876,686'Method of fabricating active layers in a laser utilizing InP-based active regions'20056,813,295'Asymmetric InGaAsN vertical cavity surface emitting lasers'20046,764,926'Method for obtaining high quality InGaAsN semiconductor devices'20046,756,325'Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region'20046,711,195'Long-wavelength photonic device with GaAsSb quantum-well layer'20046,504,171'Chirped multi-well active region LED'20036,248,674'Method of aligning nanowires'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2017Based in Cupertino, CA, US· patent location history
2004–2009Patents assigned to AGILENT TECHNOLOGIES INC (11)· patent assignee history
2006–2016Patents assigned to CHANG YING-LAN (8)· patent assignee history
2006Based in Palo Alto, CA, US· patent location history
2011–2016Patents assigned to NANOMIX INC (8)· patent assignee history
2012–2015Patents assigned to GABRIEL JEAN-CHRISTOPHE P (4)· patent assignee history
2012–2016Patents assigned to JOHNSON BRADLEY N (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AGILENT TECHNOLOGIES INC112004–2009
CHANG YING-LANself82006–2016
NANOMIX INC82011–2016
GABRIEL JEAN-CHRISTOPHE P42012–2015
JOHNSON BRADLEY N42012–2016
Locations
LocationPatentsSpan
Cupertino, California, US262001–2017
Palo Alto, California, US12006