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Inventor

Kiyoshi Mitani

Inventor
Gunma, JP

Overview

61→
Patents
1982–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1029%
H10DInorganic electric semiconductor devices13%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
Y10TTechnical subjects covered by former us classification4%
C30BSingle-crystal growth1%
H01LSemiconductor devices1%
LOC141%
LOC161%
B21JForging1%
PatentTitleYear
8,900,971'Bonded substrate and manufacturing method thereof'20148,877,609'Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate'20148,703,580'Silicon on insulator (SOI) wafer and process for producing same'20148,575,722'Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer'20138,551,246'Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer'20138,236,667'Silicon on insulator (SOI) wafer and process for producing same'20127,959,731'Method for producing semiconductor wafer'20117,608,548'Method for cleaning a multilayer substrate and method for bonding substrates and method for producing a bonded wafer'20097,601,613'Manufacturing method of bonded wafer'20097,560,313'SOI wafer and method for producing the same'20097,550,309'Method for producing semiconductor wafer'20097,531,425'Method of fabricating bonded wafer'20097,524,744'Method of producing SOI wafer and SOI wafer'20097,320,929'Method of fabricating SOI wafer'20087,315,064'Bonded wafer and method of producing bonded wafer'20087,235,427'Method for treating substrates for microelectronics and substrates obtained by said method'20077,176,102'Method for producing SOI wafer and SOI wafer'20077,091,107'Method for producing SOI wafer and SOI wafer'20067,084,046'Method of fabricating SOI wafer'20067,052,974'Bonded wafer and method of producing bonded wafer'20066,998,329'SOI wafer producing method, and wafer separating jig'20066,959,854'Production method for bonded substrates'20056,902,988'Method for treating substrates for microelectronics and substrates obtained by said method'20056,900,113'Method for producing bonded wafer and bonded wafer'20056,884,696'Method for producing bonding wafer'20056,846,718'Method for producing SOI wafer and SOI wafer'20056,797,632'Bonded wafer producing method and bonded wafer'20046,784,494'Production method for SOI wafer and SOI wafer'20046,720,640'Method for reclaiming delaminated wafer and reclaimed delaminated wafer'20046,716,722'Method of producing a bonded wafer and the bonded wafer'20046,596,610'Method for reclaiming delaminated wafer and reclaimed delaminated wafer'20036,566,233'Method for manufacturing bonded wafer'20036,461,939'SOI wafers and methods for producing SOI wafer'20026,372,609'Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method'20026,362,076'Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatment'20026,312,797'Method for manufacturing bonded wafer and bonded wafer'20016,306,730'Method of fabricating an SOI wafer and SOI wafer fabricated by the method'20016,284,628'Method of recycling a delaminated wafer and a silicon wafer used for the recycling'20016,284,629'Method of fabricating an SOI wafer and SOI wafer fabricated by the method'20016,245,645'Method of fabricating an SOI wafer'20016,239,004'Method of forming oxide film on an SOI layer and method of fabricating a bonded wafer'20016,238,990'Method for heat treatment of SOI wafer and SOI wafer heat-treated by the method'20016,140,210'Method of fabricating an SOI wafer and SOI wafer fabricated thereby'20006,004,866'Method for manufacturing bonded wafer and bonded wafer manufactured thereby'19995,998,281'SOI wafer and method for the preparation thereof'1999D0414867'Dental camera'19995,918,139'Method of manufacturing a bonding substrate'1999D0409618'Audio mixer'19995,804,494'Method of fabricating bonded wafer'1998D0398008'Speaker box'1998D0396869'Television camera'1998D0390244'Television camera'19985,702,973'Method for forming epitaxial semiconductor wafer for CMOS integrated circuits'19975,650,353'Method for production of SOI substrate'19975,578,504'Method for determination of resistivity of N-type silicon epitaxial layer'19965,538,904'Method of estimating quantity of boron at bonding interface in bonded wafer'19965,514,235'Method of making bonded wafers'19965,478,408'SOI substrate and manufacturing method therefor'19955,306,939'Epitaxial silicon wafers for CMOS integrated circuits'1994D0278629'Television receiver'19854,347,729'Hand riveter'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–2014Patents assigned to MITANI KIYOSHI (5)· patent assignee history
1985–1999Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (6)· patent assignee history
1995–2014Patents assigned to SHINETSU HANDOTAI KK (48)· patent assignee history
1995–2014Based in Gunma, JP· patent location history
1996–2007Based in Takasaki, JP· patent location history
1997Based in Isobe, Mihama-ku, Chiba-shi, Chiba, JP· patent location history
1998–1999Based in Kanagawa, JP· patent location history
1999–2014Based in Annaka, JP· patent location history
2003–2007Patents assigned to SOITEC SILICON ON INSULATOR (4)· patent assignee history
2013–2014Patents assigned to OHTSUKI TSUYOSHI (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU HANDOTAI KK481995–2014
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD61985–1999
MITANI KIYOSHIself51982–2014
OHTSUKI TSUYOSHI42013–2014
SOITEC SILICON ON INSULATOR42003–2007
Locations
LocationPatentsSpan
Gunma, JP301995–2014
Annaka, JP161999–2014
Takasaki, JP61996–2007
Kanagawa, JP51998–1999
Isobe, Mihama-ku, Chiba-shi, Chiba, JP11997