Inventor
Clément Lansalot-Matras
Inventor
Princeton, NJ, US
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material26%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H01LSemiconductor devices10%
C09DCoating compositions, e.g. paints, varnishes or lacquers6%
H10DInorganic electric semiconductor devices6%
H10BElectronic memory devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients3%
C01BNon-metallic elements2%
PatentTitleYear
10,731,251Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films202010,648,087Etching reactants and plasma-free etching processes using the same202010,174,423Niobium-containing film forming compositions and vapor deposition of Niobium-containing films201910,106,887Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films201810,106,568Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films201810,094,021Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films201810,023,462Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films20189,868,753'Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films'20189,790,591'Titanium-containing film forming compositions for vapor deposition of titanium-containing films'20179,786,671'Niobium-containing film forming compositions and vapor deposition of niobium-containing films'20179,748,249'Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films'20179,691,770'Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films'20179,691,771'Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films'20179,663,547'Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films'20179,518,075'Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films'20169,499,571'Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films'20169,416,443'Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors'20169,206,507'Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions'20159,121,093'Bis-ketoiminate copper precursors for deposition of copper-containing films and methods thereof'20159,099,301'Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films'20159,034,761'Heteroleptic (allyl)(pyrroles-2-aldiminate) metal-containing precursors, their synthesis and vapor deposition thereof to deposit metal-containing films'20158,906,457'Method of atomic layer deposition using metal precursors'20148,691,985'Heteroleptic pyrrolecarbaldimine precursors'20148,686,138'Heteroleptic pyrrolecarbaldimine precursors'20148,617,649'Cyclopentadienyl transition metal precursors for deposition of transition metal-containing films'20138,530,592'Catalyst components based on fulvene complexes'20138,436,115'Catalyst systems based on carbonylamino fulvenes'20138,431,719'Heteroleptic pyrrolecarbaldimine precursors'20138,349,738'Metal precursors for deposition of metal-containing films'20138,298,616'Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films'20128,236,979'Methods for synthesis of heteroleptic cyclopentadienyl transition metal precursors'20128,076,243'Metal precursors for deposition of metal-containing films'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2015Patents assigned to AIR LIQUIDE AMERICAN (11)· patent assignee history
2011–2014Patents assigned to LANSALOT-MATRAS CLEMENT (11)· patent assignee history
2011–2020Patents assigned to AIR LIQUIDE (9)· patent assignee history
2011–2015Patents assigned to DUSSARRAT CHRISTIAN (7)· patent assignee history
2012–2014Based in Tsukuba, JP· patent location history
2013–2017Based in Seoul, KR· patent location history
2013Based in Vezin le Coquet, FR· patent location history
2016–2018Patents assigned to L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (10)· patent assignee history
2017–2020Based in Princeton, NJ, US· patent location history
2018Based in Morrisville, PA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AIR LIQUIDE AMERICAN | 11 | 2011–2015 |
| LANSALOT-MATRAS CLEMENTself | 11 | 2011–2014 |
| L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | 10 | 2016–2018 |
| AIR LIQUIDE | 9 | 2011–2020 |
| DUSSARRAT CHRISTIAN | 7 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Princeton, New Jersey, US | 12 | 2017–2020 |
| Seoul, KR | 10 | 2013–2017 |
| Tsukuba, JP | 6 | 2012–2014 |
| Vezin le Coquet, FR | 2 | 2013 |
| Morrisville, Pennsylvania, US | 1 | 2018 |