Inventor
Chi-Weon Yoon
Inventor
Seoul, KR
Overview
Patents· 59 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores60%
H10BElectronic memory devices12%
G06FElectric digital data processing10%
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices5%
G05FSystems for regulating electric or magnetic variables1%
G09GArrangements or circuits for control of indicating devices using static means to present variable information1%
H04NPictorial communication, e.g. television1%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use1%
PatentTitleYear
10,878,919Device and method for initializing channel in nonvolatile memory device202010,748,621Memory device202010,720,209Memory device comprising resistance change material and method for driving the same202010,679,702Memory device with voltage controller202010,671,529Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays202010,600,487Methods of erasing data in nonvolatile memory devices and nonvolatile memory devices performing the same202010,566,039Memory device202010,490,289Voltage generator for a nonvolatile memory device, and a method of operating the voltage generator201910,340,000Operating method of memory device201910,181,348Memory device comprising resistance change material and method for driving the same201910,170,190Memory controller having reclaim controller and method of controlling operation of the memory controller201910,043,583Nonvolatile memory device and method of reading the same20189,947,416Nonvolatile memory device, operating method thereof and memory system including the same20189,881,685'Nonvolatile memory device, operating method thereof and memory system including the same'20189,851,912Memory device, memory system and method of operating memory device20179,799,404'Memory device, memory system and method of operating memory device'20179,798,659'Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays'20179,761,315'Memory device, memory system and method of operating memory device'20179,633,726'Resistive memory device, resistive memory system, and method of operating resistive memory device'20179,627,086'Nonvolatile memory device, operating method thereof and memory system including the same'20179,589,632'Resistive memory device including column decoder and method of performing a bidirectional driving operation and providing appropriate biasing with respect to bit lines'20179,570,170'Resistive memory device and method of operating the same'20179,570,200'Resistive memory device having memory cell arrays with multiple stack layers and bad-region managing circuit and method for managing short failure'20179,552,878'Resistive memory device and operating method'20179,530,494'Memory device and method of operating the same'20169,514,827'Memory device, memory system and method of operating memory device'20169,508,441'Memory device and memory system'20169,478,290'Memory device and memory system including the same'20169,478,285'Cross-point memory device including multi-level cells and operating method thereof'20169,472,282'Resistive memory device and method of operating the same'20169,437,290'Resistive memory device and operation'20169,406,359'Memory devices, memory systems, and related operating methods'20169,361,974'Resistive memory device and method of operating the same to reduce leakage current'20169,355,721'Resistive memory device and operating method'20169,269,430'Memory device having cross point array structure, memory system, and method of operating memory device'20169,159,443'Nonvolatile memory device, operating method thereof and memory system including the same'20159,036,425'Memory devices for reducing boosting charge leakage and systems including the same'20159,030,869'Three dimensional semiconductor memory device'20158,693,247'Non-volatile memory device and method for programming the device, and memory system'20148,570,808'Nonvolatile memory device with 3D memory cell array'20138,559,235'Nonvolatile memory device, operating method thereof and memory system including the same'20138,472,247'Non-volatile memory device and method for programming the device, and memory system'20138,359,424'Flash memory device and reading method thereof'20138,347,183'Flash memory device using ECC algorithm and method of operating the same'20138,189,386'Non-volatile memory device and associated programming method using error checking and correction (ECC)'20127,800,944'Nonvolatile semiconductor memory device and programming method thereof'20107,787,305'Flash memory devices and programming methods that vary programming conditions in response to a selected step increment'20107,782,680'Flash memory device having a verify data buffer capable of being employed as a program data buffer, and a method thereof'20107,668,015'Nonvolatile memory devices capable of reducing data programming time and methods of driving the same'20107,602,650'Flash memory device and method for programming multi-level cells in the same'20097,599,222'Semiconductor memory device using pipelined-buffer programming and related method'20097,580,281'Flash memory device with write protection'20097,539,077'Flash memory device having a data buffer and programming method of the same'20097,525,838'Flash memory device and method for programming multi-level cells in the same'20097,474,587'Flash memory device with rapid random access function and computing system including the same'20097,474,566'Non-volatile memory device and method capable of re-verifying a verified memory cell'20097,433,244'Flash memory device and related erase operation'20086,907,078'Method for storing compressed MPEG image with low power consumption and frame buffer structure used in the same'20056,400,640'Method for memory addressing'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2005Based in Taejon, KR· patent location history
2008–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (55)· patent assignee history
2008–2020Based in Seoul, KR· patent location history
2009Based in Seocho-gu, KR· patent location history
2012–2017Patents assigned to YOON CHI-WEON (12)· patent assignee history
2013–2017Patents assigned to NAM SANG-WAN (6)· patent assignee history
2016–2017Patents assigned to PARK HYUN-KOOK (5)· patent assignee history
2016–2017Patents assigned to BYEON DAE-SEOK (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 55 | 2008–2020 |
| YOON CHI-WEONself | 12 | 2012–2017 |
| NAM SANG-WAN | 6 | 2013–2017 |
| PARK HYUN-KOOK | 5 | 2016–2017 |
| BYEON DAE-SEOK | 4 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 55 | 2008–2020 |
| Seocho-gu, KR | 2 | 2009 |
| Taejon, KR | 2 | 2002–2005 |