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Inventor

Reiko Okayama

Inventor
Shunan-shi, JP

Overview

2→
Patents
2017–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth29%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
C23CCoating metallic material14%
PatentTitleYear
10,822,718Method for producing aluminum nitride single crystal substrate20209,708,733'Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy'2017

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2017–2020Patents assigned to TOKUYAMA CORP (2)· patent assignee history
2017–2020Based in Shunan-shi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKUYAMA CORP22017–2020
Locations
LocationPatentsSpan
Shunan-shi, JP22017–2020