Inventor
Yung Feng Chang
Inventor
Hsinchu, TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices24%
G06FElectric digital data processing19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
H05KPrinted circuits5%
PatentTitleYear
10,803,227Integrated circuit layouts with line-end extensions202010,522,681Method of forming a FinFET having a relaxation prevention anchor201910,453,837System and method of fabricating ESD finFET with improved metal landing in the drain201910,276,559System and method of fabricating ESD FinFET with improved metal landing in the drain201910,276,718FinFET having a relaxation prevention anchor20199,865,589'System and method of fabricating ESD FinFET with improved metal landing in the drain'20189,681,584'Quick detachable thermal connector'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017Patents assigned to NAT UNIV TSING HUA (1)· patent assignee history
2017Based in Changhua County, TW· patent location history
2018–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (6)· patent assignee history
2018–2019Based in Hsinchu County, TW· patent location history
2019–2020Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 6 | 2018–2020 |
| NAT UNIV TSING HUA | 1 | 2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 3 | 2019–2020 |
| Hsinchu County, TW | 3 | 2018–2019 |
| Changhua County, TW | 1 | 2017 |