Inventor
YANG PAN
Inventor
US
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01LSemiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01JElectric discharge tubes or discharge lamps8%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
B01DSeparation3%
H10NElectric solid-state devices not otherwise provided for3%
C02FTreatment of water, waste water, sewage, or sludge3%
C23CCoating metallic material3%
H10BElectronic memory devices3%
PatentTitleYear
12,553,283Shutter controller202612,550,660Plasma etching chemistries of high aspect ratio features in dielectrics202612,550,646Selectively etching for nanowires202612,510,825Photoresist development with halide chemistries202512,509,380Method for phosphorus removal and recovery using organic carbon source of urban sewage202512,510,826Photoresist development with halide chemistries202512,492,139Process for enriching phosphorus and recovering blue iron ore by using biofilm method202512,492,087Underground container logistics loading and unloading system based on deep underground passage202512,494,995Packet forwarding method and apparatus202512,437,995Tin oxide films in semiconductor device manufacturing202512,417,902Method for cleaning a chamber202512,417,916Tin oxide films in semiconductor device manufacturing202512,400,842Method of cleaning chamber components with metal etch residues202512,341,021Selective etch using deposition of a metalloid or metal containing hardmask202512,278,125Integrated dry processes for patterning radiation photoresist patterning202512,266,542Atomic layer etching for subtractive metal etch202512,256,645Chemical etch nonvolatile materials for MRAM patterning202512,183,604Integrated dry processes for patterning radiation photoresist patterning202412,183,589Tin oxide mandrels in patterning202412,127,486Resistive random access memory with preformed filaments202412,119,218Sacrificial protection layer for environmentally sensitive surfaces of substrates202412,119,243Plasma etching chemistries of high aspect ratio features in dielectrics202412,105,422Photoresist development with halide chemistries202412,094,711Tin oxide films in semiconductor device manufacturing202412,080,562Atomic layer etch and ion beam etch patterning202412,062,538Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement202412,022,202Image sensor, global shutter control method and computer storage medium202411,969,697Phenyl-modified polydimethylsiloxane (PDMS) separation membrane, fabrication method thereof, and use thereof in separation of aromatic compound202411,951,446Acryloyloxy-terminated polydimethylsiloxane (AC-PDMS)-based thin-film composite (TFC) membrane, and preparation method and use thereof202411,944,942Polyether block polyamide/polydimethylsiloxane composite membrane for gas separation, and preparation method and use thereof202411,941,572Machine learning item delivery using sensor data202411,935,758Atomic layer etching for subtractive metal etch202411,792,987Self-aligned vertical integration of three-terminal memory devices202311,670,516Metal-containing passivation for high aspect ratio etch202311,626,099Transmit beamforming of a two-dimensional array of ultrasonic transducers202311,594,429Plasma etching chemistries of high aspect ratio features in dielectrics202311,450,532Deposition of self assembled monolayer for enabling selective deposition and etch202211,450,513Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials202211,355,353Tin oxide mandrels in patterning202211,322,351Tin oxide films in semiconductor device manufacturing2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to LAM RES CORP (29)· patent assignee history
2022–2026Based in US· patent location history
2023–2026Based in CN· patent location history
2024Patents assigned to NANJING UNIVERSITY OF TECHNOLOGY (3)· patent assignee history
2024Patents assigned to AMAZON TECH INC (1)· patent assignee history
2025Patents assigned to UNIV SUZHOU SCI & TECHNOLOGY (2)· patent assignee history
2025Patents assigned to HUAWEI TECH CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LAM RES CORP | 29 | 2022–2026 |
| NANJING UNIVERSITY OF TECHNOLOGY | 3 | 2024 |
| UNIV SUZHOU SCI & TECHNOLOGY | 2 | 2025 |
| AMAZON TECH INC | 1 | 2024 |
| HUAWEI TECH CO LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 30 | 2022–2026 |
| CN | 10 | 2023–2026 |