Inventor
Kazuyuki Sugahara
Inventor
Hyogo, JP
Overview
Patents· 50 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
H10BElectronic memory devices6%
H01LSemiconductor devices4%
C12NMicroorganisms or enzymes4%
C12PFermentation or enzyme-using processes to synthesise a desired chemical compound or composition or to separate optical isomers from a racemic mixture4%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
C12MApparatus for enzymology or microbiology2%
PatentTitleYear
11,117,365Printing device202111,063,122Silicon carbide semiconductor device and power conversion device202110,707,146Semiconductor device and method for manufacturing same, for releaved stress and high heat conductivity202010,276,502Semiconductor device and method for manufacturing same20199,842,738'Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device'20179,721,915'Semiconductor device'20179,120,631'Board working system, board conveying apparatus, and board working apparatus'20158,685,674'Chondroitin synthase, method for producing the same and method for producing saccharide chain-extended chondroitin'20148,481,290'Antibody specific for a chondroitin sulphate epitope'20138,334,115'Chondroitin synthase, method for producing the same and method for producing saccharide chain-extended chondroitin'20128,080,450'Method of manufacturing semiconductor thin film'20117,947,481'Chondroitin synthase, method for producing the same and method for producing saccharide chain-extended chondroitin'20117,642,605'Semiconductor device'20107,553,778'Method for producing a semiconductor device including crystallizing an amphorous semiconductor film'20097,396,707'Fabrication method of a semiconductor device'20087,354,741'Method for producing saccharide chain-extended chondroitin'20087,262,433'Semiconductor device'20077,176,491'Semiconductor device'20076,841,879'Semiconductor device'20055,736,438'Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same'19985,528,054'Semiconductor device having active region in semiconductor layer on insulator layer and manufacturing method thereof'19965,514,880'Field effect thin-film transistor for an SRAM with reduced standby current'19965,504,376'Stacked-type semiconductor device'19965,480,826'Method of manufacturing semiconductor device having a capacitor'19965,446,301'Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same'19955,413,968'Semiconductor device and manufacturing method thereof'19955,401,683'Method of manufacturing a multi-layered semiconductor substrate'19955,381,029'Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same'19955,371,381'Process for producing single crystal semiconductor layer and semiconductor device produced by said process'19945,355,022'Stacked-type semiconductor device'19945,338,388'Method of forming single-crystal semiconductor films'19945,315,140'Semiconductor device having a polysilicon capacitor with large grain diameter'19945,214,001'Method of manufacturing semiconductor device having planar single crystal semiconductor surface'19935,128,732'Stacked semiconductor device'19925,094,714'Wafer structure for forming a semiconductor single crystal film'19925,070,030'Method of making an oxide isolated, lateral bipolar transistor'19915,006,913'Stacked type semiconductor device'19914,990,991'Bipolar transistor and method of manufacturing the same'19914,953,125'Semiconductor memory device having improved connecting structure of bit line and memory cell'19904,870,031'Method of manufacturing a semiconductor device'19894,861,418'Method of manufacturing semiconductor crystalline layer'19894,845,537'Vertical type MOS transistor and method of formation thereof'19894,822,752'Process for producing single crystal semiconductor layer and semiconductor device produced by said process'19894,801,548'Petri dish for cultivating bacteria and method of inspecting drug susceptibility'19894,787,740'Apparatus and method for determining crystal orientation'19884,778,269'Method for determining crystal orientation'19884,775,628'Petri dish for cultivating bacteria and method of inspecting drug susceptibility'19884,714,684'Method of forming single crystal layer on dielectric layer by controlled rapid heating'19874,694,143'Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer'19874,661,167'Method for manufacturing a monocrystalline semiconductor device'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–2021Patents assigned to MITSUBISHI ELECTRIC CORP (34)· patent assignee history
1987–1995Patents assigned to AGENCY IND SCIENCE TECHN (4)· patent assignee history
1987–2010Based in Hyogo, JP· patent location history
1987–1994Based in Itami, JP· patent location history
1988–1989Based in Nagasaki, JP· patent location history
1989–1992Patents assigned to KOZO IIZUKA DIRECTOR GENERAL A (3)· patent assignee history
2008–2014Based in Kyoto, JP· patent location history
2009–2021Based in Tokyo, JP· patent location history
2011–2013Patents assigned to SUGAHARA KAZUYUKI (3)· patent assignee history
2012–2014Patents assigned to GLYTECH INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 34 | 1987–2021 |
| AGENCY IND SCIENCE TECHN | 4 | 1987–1995 |
| KOZO IIZUKA DIRECTOR GENERAL A | 3 | 1989–1992 |
| SUGAHARA KAZUYUKIself | 3 | 2011–2013 |
| GLYTECH INC | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hyogo, JP | 28 | 1987–2010 |
| Tokyo, JP | 6 | 2009–2021 |
| Itami, JP | 6 | 1987–1994 |
| Kyoto, JP | 4 | 2008–2014 |
| Nagasaki, JP | 2 | 1988–1989 |