LexDanaLexDanabeta
Inventor

Douglas A. Buchberger, Jr.

Inventor
Livermore, CA, US

Overview

110→
Patents
1993–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 110 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01JElectric discharge tubes or discharge lamps23%
H05HPlasma technique9%
C23CCoating metallic material7%
H01FMagnets6%
Y10TTechnical subjects covered by former us classification6%
H01LSemiconductor devices5%
F25BRefrigeration machines, plants or systems2%
H02NElectric machines not otherwise provided for2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
11,114,306Methods for depositing dielectric material202111,112,697Method and apparatus for post exposure processing of photoresist wafers202111,088,005Electrostatic chuck having thermally isolated zones with minimal crosstalk202110,854,425Feedforward temperature control for plasma processing apparatus202010,770,328Substrate support with symmetrical feed structure202010,615,006Symmetric plasma process chamber202010,580,620Symmetric plasma process chamber202010,546,728Symmetric plasma process chamber202010,535,502Symmetric plasma process chamber202010,474,033Method and apparatus for post exposure processing of photoresist wafers201910,453,656Symmetric plasma process chamber201910,386,126Apparatus for controlling temperature uniformity of a substrate201910,304,715Electrostatic chuck having thermally isolated zones with minimal crosstalk201910,203,604Method and apparatus for post exposure processing of photoresist wafers201910,131,994Inductively coupled plasma source with top coil over a ceiling and an independent side coil and independent air flow201810,096,494Substrate support with symmetrical feed structure201810,096,466Pulsed plasma for film deposition20189,991,148Electrostatic chuck having thermally isolated zones with minimal crosstalk20189,916,967'Fast response fluid control system'20189,896,769'Inductively coupled plasma source with multiple dielectric windows and window-supporting structure'20189,829,790Immersion field guided exposure and post-exposure bake process20179,745,663'Symmetrical inductively coupled plasma source with symmetrical flow chamber'20179,741,546'Symmetric plasma process chamber'20179,666,466'Electrostatic chuck having thermally isolated zones with minimal crosstalk'20179,570,275'Heated showerhead assembly'20179,358,702'Temperature management of aluminium nitride electrostatic chuck'20169,338,871'Feedforward temperature control for plasma processing apparatus'20169,267,742'Apparatus for controlling the temperature uniformity of a substrate'20169,248,509'Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity'20169,214,315'Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow'20159,123,762'Substrate support with symmetrical feed structure'20158,980,044'Plasma reactor with a multiple zone thermal control feed forward control apparatus'20158,937,800'Electrostatic chuck with advanced RF and temperature uniformity'20158,916,793'Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow'20148,876,024'Heated showerhead assembly'20148,822,876'Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity'20148,801,893'Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor'20148,734,664'Method of differential counter electrode tuning in an RF plasma reactor'20148,633,423'Methods and apparatus for controlling substrate temperature in a process chamber'20148,629,370'Assembly for delivering RF power and DC voltage to a plasma processing chamber'20148,617,351'Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction'20138,608,900'Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes'20138,607,731'Cathode with inner and outer electrodes at different heights'20138,546,267'Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control'20138,337,660'Capacitively coupled plasma reactor having very agile wafer temperature control'20128,329,586'Method of processing a workpiece in a plasma reactor using feed forward thermal control'20128,270,141'Electrostatic chuck with reduced arcing'20128,221,580'Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops'20128,157,951'Capacitively coupled plasma reactor having very agile wafer temperature control'20128,092,638'Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution'20128,092,639'Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes'20128,080,479'Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator'20118,076,247'Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes'20118,074,677'Method and apparatus for controlling gas flow to a processing chamber'20118,034,180'Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor'20118,021,521'Method for agile workpiece temperature control in a plasma reactor using a thermal model'20118,012,304'Plasma reactor with a multiple zone thermal control feed forward control apparatus'20117,988,872'Method of operating a capacitively coupled plasma reactor with dual temperature control loops'20117,972,467'Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor'20117,968,469'Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity'20117,884,025'Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources'20117,879,731'Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources'20117,846,497'Method and apparatus for controlling gas flow to a processing chamber'20107,775,236'Method and apparatus for controlling gas flow to a processing chamber'20107,754,997'Apparatus and method to confine plasma and reduce flow resistance in a plasma'20107,674,353'Apparatus to confine plasma and to enhance flow conductance'20107,649,729'Electrostatic chuck assembly'20107,618,516'Method and apparatus to confine plasma and to enhance flow conductance'20097,585,384'Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor'20097,479,456'Gasless high voltage high contact force wafer contact-cooling electrostatic chuck'20097,432,209'Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material'20087,196,283'Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface'20077,186,943'MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20077,141,757'Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent'20067,132,618'MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20067,030,335'Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20066,900,596'Capacitively coupled plasma reactor with uniform radial distribution of plasma'20056,894,245'Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20056,790,311'Plasma reactor having RF power applicator and a dual-purpose window'20046,736,931'Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor'20046,677,712'Gas distribution plate electrode for a plasma receptor'20046,667,577'Plasma reactor with spoke antenna having a VHF mode with the spokes in phase'20036,652,712'Inductive antenna for a plasma reactor producing reduced fluorine dissociation'20036,623,596'Plasma reactor having an inductive antenna coupling power through a parallel plate electrode'20036,586,886'Gas distribution plate electrode for a plasma reactor'20036,524,432'Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density'20036,514,376'Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna'20036,454,898'Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners'20026,444,085'Inductively coupled RF plasma reactor having an antenna adjacent a window electrode'20026,440,866'Plasma reactor with heated source of a polymer-hardening precursor material'20026,365,063'Plasma reactor having a dual mode RF power application'20026,252,354'RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control'20016,218,312'Plasma reactor with heated source of a polymer-hardening precursor material'20016,165,311'Inductively coupled RF plasma reactor having an overhead solenoidal antenna'20006,077,384'Plasma reactor having an inductive antenna coupling power through a parallel plate electrode'20006,074,512'Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners'20006,063,233'Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna'20006,054,013'Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density'20006,036,877'Plasma reactor with heated source of a polymer-hardening precursor material'20006,024,826'Plasma reactor with heated source of a polymer-hardening precursor material'20005,990,017'Plasma reactor with heated source of a polymer-hardening precursor material'19995,916,689'Electrostatic chuck with an impregnated, porous layer that exhibits the Johnson-Rahbeck effect'19995,874,361'Method of processing a wafer within a reaction chamber'19995,800,871'Electrostatic chuck with polymeric impregnation and method of making'19985,792,562'Electrostatic chuck with polymeric impregnation and method of making'19985,684,669'Method for dechucking a workpiece from an electrostatic chuck'19975,574,410'Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits'19965,572,170'Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits'19965,392,018'Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits'19955,187,454'Electronically tuned matching network using predictor-corrector control system'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2021Patents assigned to APPLIED MATERIALS INC (104)· patent assignee history
1993–2004Based in Tracy, CA, US· patent location history
2000–2002Based in Pleasanton, CA, US· patent location history
2003–2021Based in Livermore, CA, US· patent location history
2011–2016Patents assigned to BUCHBERGER JR DOUGLAS A (23)· patent assignee history
2011–2016Patents assigned to BERA KALLOL (16)· patent assignee history
2012–2015Patents assigned to HOFFMAN DANIEL J (12)· patent assignee history
2012–2016Patents assigned to TAVASSOLI HAMID (12)· patent assignee history
2021Based in Livemore, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC1041993–2021
BUCHBERGER JR DOUGLAS Aself232011–2016
BERA KALLOL162011–2016
HOFFMAN DANIEL J122012–2015
TAVASSOLI HAMID122012–2016
Locations
LocationPatentsSpan
Livermore, California, US812003–2021
Tracy, California, US261993–2004
Pleasanton, California, US22000–2002
Livemore, California, US12021