Inventor
Stephane Monfray
Inventor
Eybens, FR
Overview
Patents· 49 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices16%
H01LSemiconductor devices15%
H02NElectric machines not otherwise provided for10%
H10NElectric solid-state devices not otherwise provided for10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
F03GSpring, weight, inertia or like motors5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
Y10TTechnical subjects covered by former us classification5%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G01RMeasuring electric variables2%
PatentTitleYear
10,823,986Photonic devices and methods of fabrication thereof202010,795,189Electro-optical phase modulator202010,794,856Detection device, in particular incorporated in a PH meter, and corresponding production process202010,741,740Thermo-electric generator202010,690,947Photonic devices and methods of fabrication thereof202010,684,251Ion sensitive field effect transistor (ISFET) having higher sensitivity in response to dynamic biasing202010,587,131System for measuring the power level of an ambient energy source202010,312,431Method of manufacturing bistable strips having different curvatures201910,298,151Device for converting thermal energy into electrical energy201910,103,310Thermo-electric generator201810,075,102System for converting thermal energy into electrical power201810,074,649High-sensitivity electronic detector201810,020,758Thermal energy harvesting device20189,972,190Event detector20189,966,879Thermal energy harvesting optimization with bistable elements and collaborative behavior20189,742,219'Circuit for comparing a voltage with a threshold'20179,735,707'Thermal energy harvesting optimisation with bistable elements and collaborative behavior'20179,722,166'Tunnel-effect power converter'20179,698,707'Device for converting thermal power into electric power'20179,615,443'Integrated circuit chip cooling device'20179,601,382'Method for the formation of a FinFET device with epitaxially grown source-drain regions having a reduced leakage path'20179,601,381'Method for the formation of a finFET device with epitaxially grown source-drain regions having a reduced leakage path'20179,528,502'System for conversing thermal energy into electrical energy'20169,444,371'Device for recovering and converting heat energy into electrical energy'20169,303,630'Device for converting thermal energy into electric energy in the presence of a hot source'20169,276,503'Energy harvesting device'20169,184,295'Method for manufacturing a suspended membrane and dual-gate MOS transistor'20158,951,425'Curved plate and method of forming the same'20158,878,258'Detector of biological or chemical material and corresponding array of detectors'20148,847,059'Process for generating electrical energy in a semiconductor device and the corresponding device'20148,772,879'Electronic component comprising a number of MOSFET transistors and manufacturing method'20148,693,165'Electrical energy generation device'20148,586,445'Method for manufacturing a suspended membrane and dual-gate MOS transistor'20138,173,992'Transistor or triode structure with tunneling effect and insulating nanochannel'20128,159,109'Microresonator'20127,906,381'Method for integrating silicon-on-nothing devices with standard CMOS devices'20117,892,927'Transistor with a channel comprising germanium'20117,858,407'Microresonator'20107,638,844'Manufacturing method of semiconductor-on-insulator region structures'20097,436,005'Process for fabricating a heterostructure-channel insulated-gate field-effect transistor, and the corresponding transistor'20087,378,692'Integrated electronic circuit comprising superposed components'20087,229,867'Process for producing a field-effect transistor and transistor thus obtained'20077,202,137'Process for producing an integrated electronic circuit comprising superposed components and integrated electronic circuit thus obtained'20077,196,451'Electromechanical resonator and method for fabricating such a resonator'20076,969,878'Surround-gate semiconductor device encapsulated in an insulating medium'20056,852,993'Emission process for a single photon, corresponding semiconducting device and manufacturing process'20056,724,660'Integrated semiconductor memory device having quantum well buried in a substrate'20046,656,782'Process for manufacturing an isolated-gate transistor with an architecture of the substrate-on-insulator type, and corresponding transistor'20036,534,811'DRAM cell with high integration density'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2020Patents assigned to ST MICROELECTRONICS SA (18)· patent assignee history
2003–2012Based in Grenoble, FR· patent location history
2008–2016Patents assigned to ST MICROELECTRONICS CROLLES 2 (13)· patent assignee history
2008–2020Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (9)· patent assignee history
2010–2016Patents assigned to SKOTNICKI THOMAS (8)· patent assignee history
2013–2020Based in Eybens, FR· patent location history
2016–2020Patents assigned to ST MICROELECTRONICS CROLLES 2 SAS (23)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ST MICROELECTRONICS CROLLES 2 SAS | 23 | 2016–2020 |
| ST MICROELECTRONICS SA | 18 | 2003–2020 |
| ST MICROELECTRONICS CROLLES 2 | 13 | 2008–2016 |
| COMMISSARIAT ENERGIE ATOMIQUE | 9 | 2008–2020 |
| SKOTNICKI THOMAS | 8 | 2010–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Eybens, FR | 33 | 2013–2020 |
| Grenoble, FR | 16 | 2003–2012 |