Inventor
Anne S. Verhulst
Inventor
Houtvenne, BE
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices44%
B82YSpecific uses or applications of nanostructures23%
H01LSemiconductor devices15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10BElectronic memory devices3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
10,211,287Layered structure of a P-TFET20199,704,992'Drain extension region for tunnel FET'20179,608,094'Heterosection tunnel field-effect transistor (TFET)'20179,318,583'Tunnel field effect transistor and method for making thereof'20169,070,720'Tunnel field effect transistor device and method for making the device'20158,872,230'Tunnel field-effect transistor and methods for manufacturing thereof'20148,629,428'Line-tunneling tunnel field-effect transistor (TFET) and manufacturing method'20148,576,614'Tunnel transistor, logical gate including the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor'20138,431,924'Control of tunneling junction in a hetero tunnel field effect transistor'20138,415,209'Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device'20138,404,545'Tunnel field-effect transistor with gated tunnel barrier'20138,304,843'Tunnel field effect transistor with improved subthreshold swing'20128,241,983'Method of making a hetero tunnel field effect transistor'20128,232,517'Wavelength-sensitive detector comprising photoconductor units each having different types of elongated nanostructures'20128,148,220'Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure'20128,120,115'Tunnel field-effect transistor with gated tunnel barrier'20128,072,012'Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure'20117,893,476'Tunnel effect transistors based on silicon nanowires'20117,598,482'Wavelength-sensitive detector with elongate nanostructures'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2015Patents assigned to IMEC (15)· patent assignee history
2009–2019Based in Houtvenne, BE· patent location history
2011–2019Patents assigned to UNIV LEUVEN KATH (11)· patent assignee history
2011–2014Patents assigned to VERHULST ANNE S (11)· patent assignee history
2011–2013Patents assigned to VANDENBERGHE WILLIAM G (4)· patent assignee history
2013Based in Leuven, BE· patent location history
2016–2019Patents assigned to IMEC VZW (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IMEC | 15 | 2009–2015 |
| UNIV LEUVEN KATH | 11 | 2011–2019 |
| VERHULST ANNE Sself | 11 | 2011–2014 |
| IMEC VZW | 4 | 2016–2019 |
| VANDENBERGHE WILLIAM G | 4 | 2011–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Houtvenne, BE | 18 | 2009–2019 |
| Leuven, BE | 1 | 2013 |